Datasheets
FQP6N70 by:

Power Field-Effect Transistor, 6.2A I(D), 700V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Part Details for FQP6N70 by Fairchild Semiconductor Corporation

Overview of FQP6N70 by Fairchild Semiconductor Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for FQP6N70

Part # Distributor Description Stock Price Buy
Rochester Electronics Power Field-Effect Transistor, 6.2A, 700V, 1.5ohm, N-Channel, MOSFET, TO-220AB ' RoHS: Compliant Status: Obsolete Min Qty: 1 10000
  • 1 $1.1600
  • 25 $1.1400
  • 100 $1.0900
  • 500 $1.0400
  • 1,000 $0.9863
$0.9863 / $1.1600 Buy Now

Part Details for FQP6N70

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FQP6N70 Part Data Attributes

FQP6N70 Fairchild Semiconductor Corporation
Buy Now Datasheet
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FQP6N70 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 6.2A I(D), 700V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-220
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Manufacturer Package Code 3LD, TO220, JEDEC, MOLDED
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 600 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 700 V
Drain Current-Max (ID) 6.2 A
Drain-source On Resistance-Max 1.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 142 W
Pulsed Drain Current-Max (IDM) 24.8 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQP6N70

This table gives cross-reference parts and alternative options found for FQP6N70. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQP6N70, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FQP6N70 700V N-Channel QFET®, 1000-TUBE onsemi FQP6N70 vs FQP6N70
Part Number Description Manufacturer Compare
2SK2695-01 Power Field-Effect Transistor, 5A I(D), 700V, 1.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Fuji Electric Co Ltd FQP6N70 vs 2SK2695-01
STP6NK70Z 5A, 700V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN STMicroelectronics FQP6N70 vs STP6NK70Z
SSP6N70A Power Field-Effect Transistor, 6A I(D), 700V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor FQP6N70 vs SSP6N70A
STQ3NK50ZR-AP 0.5A, 500V, 3.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-92, TO-92, 3 PIN STMicroelectronics FQP6N70 vs STQ3NK50ZR-AP
SSP6N70A Power Field-Effect Transistor, 6A I(D), 700V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation FQP6N70 vs SSP6N70A
STP9NK70Z N-Channel 700V - 1Ohm - 7.5A - TO-220 Zener-Protected SuperMesh(TM) POWER MOSFET STMicroelectronics FQP6N70 vs STP9NK70Z
FQP6N70 700V N-Channel QFET®, 1000-TUBE onsemi FQP6N70 vs FQP6N70

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