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Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 52.4 A, 21 mΩ, TO-220, 1000-TUBE
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
38C7278
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Newark | Mosfet, N, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:52A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.5V, Power Dissipation:121W, Msl:- Rohs Compliant: Yes |Onsemi FQP50N06L Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
DISTI #
47T5069
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Newark | Mosfet Transistor, N Channel, 52.4 A, 60 V, 0.017 Ohm, 10 V, 2.5 V Rohs Compliant: Yes |Onsemi FQP50N06L Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
|
$0.8950 / $1.8600 | Buy Now |
|
Future Electronics | N-Channel 60 V 0.022 Ohm Flange Mount Mosfet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Lead time: 6 Weeks Container: Tube | 0Tube |
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$0.7650 / $0.9050 | Buy Now |
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Bristol Electronics | 30 |
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RFQ |
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FQP50N06L
onsemi
Buy Now
Datasheet
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Compare Parts:
FQP50N06L
onsemi
Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 52.4 A, 21 mΩ, TO-220, 1000-TUBE
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Pbfree Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | ONSEMI | |
Package Description | TO-220, 3 PIN | |
Manufacturer Package Code | 340AT | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 31 Weeks, 5 Days | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 990 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 52.4 A | |
Drain-source On Resistance-Max | 0.025 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 120 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 121 W | |
Pulsed Drain Current-Max (IDM) | 210 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 470 ns | |
Turn-on Time-Max (ton) | 820 ns |
This table gives cross-reference parts and alternative options found for FQP50N06L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQP50N06L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FQP50N06L-EPKE0003 | Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | onsemi | FQP50N06L vs FQP50N06L-EPKE0003 |
FQP50N06J69Z | Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | FQP50N06L vs FQP50N06J69Z |
FQP50N06_NL | Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN | Fairchild Semiconductor Corporation | FQP50N06L vs FQP50N06_NL |
FQP50N06 | 50A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | Rochester Electronics LLC | FQP50N06L vs FQP50N06 |