Datasheets
FQP50N06L by:

Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 52.4 A, 21 mΩ, TO-220, 1000-TUBE

Part Details for FQP50N06L by onsemi

Overview of FQP50N06L by onsemi

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Price & Stock for FQP50N06L

Part # Distributor Description Stock Price Buy
DISTI # 38C7278
Newark Mosfet, N, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:52A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.5V, Power Dissipation:121W, Msl:- Rohs Compliant: Yes |Onsemi FQP50N06L Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # 47T5069
Newark Mosfet Transistor, N Channel, 52.4 A, 60 V, 0.017 Ohm, 10 V, 2.5 V Rohs Compliant: Yes |Onsemi FQP50N06L Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 1 $1.8600
  • 10 $1.6700
  • 100 $1.3500
  • 500 $1.1400
  • 1,000 $0.9630
  • 2,500 $0.9100
  • 5,000 $0.8950
$0.8950 / $1.8600 Buy Now
Future Electronics N-Channel 60 V 0.022 Ohm Flange Mount Mosfet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Lead time: 6 Weeks Container: Tube 0
Tube
  • 50 $0.9050
  • 200 $0.8600
  • 750 $0.8250
  • 1,500 $0.8050
  • 3,750 $0.7650
$0.7650 / $0.9050 Buy Now
Bristol Electronics   30
RFQ

Part Details for FQP50N06L

FQP50N06L CAD Models

FQP50N06L Part Data Attributes

FQP50N06L onsemi
Buy Now Datasheet
Compare Parts:
FQP50N06L onsemi Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 52.4 A, 21 mΩ, TO-220, 1000-TUBE
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Package Description TO-220, 3 PIN
Manufacturer Package Code 340AT
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 31 Weeks, 5 Days
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 990 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 52.4 A
Drain-source On Resistance-Max 0.025 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 120 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 121 W
Pulsed Drain Current-Max (IDM) 210 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 470 ns
Turn-on Time-Max (ton) 820 ns

Alternate Parts for FQP50N06L

This table gives cross-reference parts and alternative options found for FQP50N06L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQP50N06L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FQP50N06L-EPKE0003 Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB onsemi FQP50N06L vs FQP50N06L-EPKE0003
FQP50N06J69Z Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation FQP50N06L vs FQP50N06J69Z
FQP50N06_NL Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN Fairchild Semiconductor Corporation FQP50N06L vs FQP50N06_NL
FQP50N06 50A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN Rochester Electronics LLC FQP50N06L vs FQP50N06
Part Number Description Manufacturer Compare
FQP50N06L-EPKE0003 Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB onsemi FQP50N06L vs FQP50N06L-EPKE0003
FQP50N06 50A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN Rochester Electronics LLC FQP50N06L vs FQP50N06
FQP50N06LJ69Z Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN Fairchild Semiconductor Corporation FQP50N06L vs FQP50N06LJ69Z
FQP50N06J69Z Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation FQP50N06L vs FQP50N06J69Z

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