Datasheets
FQP50N06L-EPKE0003 by: onsemi

Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Details for FQP50N06L-EPKE0003 by onsemi

Overview of FQP50N06L-EPKE0003 by onsemi

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Price & Stock for FQP50N06L-EPKE0003

Part # Distributor Description Stock Price Buy
DISTI # 488-FQP50N06L-EPKE0003-ND
DigiKey MOSFET N-CH 60V 65A TO220-3 Lead time: 99 Weeks Container: Tube Temporarily Out of Stock
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Part Details for FQP50N06L-EPKE0003

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FQP50N06L-EPKE0003 Part Data Attributes:

FQP50N06L-EPKE0003 onsemi
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FQP50N06L-EPKE0003 onsemi Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Package Description TO-220, 3 PIN
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 990 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 52.4 A
Drain-source On Resistance-Max 0.025 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 120 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 121 W
Pulsed Drain Current-Max (IDM) 210 A
Surface Mount NO
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 470 ns
Turn-on Time-Max (ton) 820 ns

Alternate Parts for FQP50N06L-EPKE0003

This table gives cross-reference parts and alternative options found for FQP50N06L-EPKE0003. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQP50N06L-EPKE0003, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FQP50N06 Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation FQP50N06L-EPKE0003 vs FQP50N06
FQP50N06_NL Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN Fairchild Semiconductor Corporation FQP50N06L-EPKE0003 vs FQP50N06_NL
FQP50N06J69Z Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation FQP50N06L-EPKE0003 vs FQP50N06J69Z
FQP50N06 50A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN Rochester Electronics LLC FQP50N06L-EPKE0003 vs FQP50N06
FQP50N06L Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 52.4 A, 21 mΩ, TO-220, 1000-TUBE onsemi FQP50N06L-EPKE0003 vs FQP50N06L
FQP50N06LJ69Z Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN Fairchild Semiconductor Corporation FQP50N06L-EPKE0003 vs FQP50N06LJ69Z
FQP50N06 Power MOSFET, N-Channel, QFET®, 60 V, 50 A, 22 mΩ, TO-220, 1000-TUBE onsemi FQP50N06L-EPKE0003 vs FQP50N06
Part Number Description Manufacturer Compare
FQP50N06L Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 52.4 A, 21 mΩ, TO-220, 1000-TUBE onsemi FQP50N06L-EPKE0003 vs FQP50N06L
FQP50N06J69Z Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation FQP50N06L-EPKE0003 vs FQP50N06J69Z
FQP50N06LJ69Z Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN Fairchild Semiconductor Corporation FQP50N06L-EPKE0003 vs FQP50N06LJ69Z
FQP50N06 Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation FQP50N06L-EPKE0003 vs FQP50N06
FQP50N06 Power MOSFET, N-Channel, QFET®, 60 V, 50 A, 22 mΩ, TO-220, 1000-TUBE onsemi FQP50N06L-EPKE0003 vs FQP50N06
FQP50N06_NL Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN Fairchild Semiconductor Corporation FQP50N06L-EPKE0003 vs FQP50N06_NL
FQP50N06 50A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN Rochester Electronics LLC FQP50N06L-EPKE0003 vs FQP50N06

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