Part Details for FQP50N06 by Fairchild Semiconductor Corporation
Overview of FQP50N06 by Fairchild Semiconductor Corporation
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (6 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for FQP50N06
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 1 | 19 |
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$33.7487 / $35.1000 | Buy Now |
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DISTI #
785590
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Jameco Electronics | Transistor FQP50N06 MOSFET N-Channel 60 Volt 50 Amp TO-220 Min Qty: 1 Container: Each | 90 |
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$0.8900 / $1.4900 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 15 |
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$36.5625 / $38.0250 | Buy Now |
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ComSIT USA | 60V N-CHANNEL MOSFET Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant | Europe - 100 |
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RFQ | |
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Chip1Cloud | MOSFET N-CH 60V 50A TO-220 | 10700 |
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RFQ | |
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Sense Electronic Company Limited | TO-220 | 1000 |
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RFQ |
Part Details for FQP50N06
FQP50N06 CAD Models
FQP50N06 Part Data Attributes:
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FQP50N06
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FQP50N06
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-220 | |
| Package Description | TO-220, 3 PIN | |
| Pin Count | 3 | |
| Manufacturer Package Code | TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 490 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.022 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 120 W | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQP50N06
This table gives cross-reference parts and alternative options found for FQP50N06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQP50N06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQP50N06L-EPKE0003 | Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | onsemi | FQP50N06 vs FQP50N06L-EPKE0003 |
| FQP50N06L | Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 52.4 A, 21 mΩ, TO-220, 1000-TUBE | onsemi | FQP50N06 vs FQP50N06L |
| FQP50N06J69Z | Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | FQP50N06 vs FQP50N06J69Z |
| FQP50N06LJ69Z | Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN | Fairchild Semiconductor Corporation | FQP50N06 vs FQP50N06LJ69Z |
| FQP50N06 | Power MOSFET, N-Channel, QFET®, 60 V, 50 A, 22 mΩ, TO-220, 1000-TUBE | onsemi | FQP50N06 vs FQP50N06 |
| FQP50N06_NL | Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN | Fairchild Semiconductor Corporation | FQP50N06 vs FQP50N06_NL |