Part Details for FQL40N50F by Fairchild Semiconductor Corporation
Overview of FQL40N50F by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FQL40N50F
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | Power Field-Effect Transistor, 40A, 500V, 0.11ohm, N-Channel, MOSFET, TO-264AA ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 99 |
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$5.3700 / $6.3200 | Buy Now |
Part Details for FQL40N50F
FQL40N50F CAD Models
FQL40N50F Part Data Attributes:
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FQL40N50F
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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FQL40N50F
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 40A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-264 | |
Package Description | TO-264, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | 3LD; TO264; MOLDED; JEDEC VARIATION AA | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 1800 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 40 A | |
Drain-source On Resistance-Max | 0.11 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-264AA | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 460 W | |
Pulsed Drain Current-Max (IDM) | 160 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FQL40N50F
This table gives cross-reference parts and alternative options found for FQL40N50F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQL40N50F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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934057024118 | 75A, 30V, 0.0152ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3 | NXP Semiconductors | FQL40N50F vs 934057024118 |
STD3NA50T4 | 2.7A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 | STMicroelectronics | FQL40N50F vs STD3NA50T4 |
IXFH68N20 | Power Field-Effect Transistor, 68A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, | IXYS Corporation | FQL40N50F vs IXFH68N20 |
IRF620B | Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | FQL40N50F vs IRF620B |
SPA16N50C3 | Power Field-Effect Transistor, 16A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN | Infineon Technologies AG | FQL40N50F vs SPA16N50C3 |
STD7NK30Z | 5A, 300V, 0.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, ROHS COMPLIANT, DPAK-3 | STMicroelectronics | FQL40N50F vs STD7NK30Z |
IXFH32N50Q | Power Field-Effect Transistor, 32A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN | IXYS Corporation | FQL40N50F vs IXFH32N50Q |
IPD06N03LBG | Power Field-Effect Transistor, 50A I(D), 30V, 0.0061ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, TO-252, 3 PIN | Infineon Technologies AG | FQL40N50F vs IPD06N03LBG |
NP90N055VUG-E1-AY | Power MOSFETs for Automotive, MP-3ZP, /Embossed Tape | Renesas Electronics Corporation | FQL40N50F vs NP90N055VUG-E1-AY |
BUK9614-30 | 69A, 30V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET | NXP Semiconductors | FQL40N50F vs BUK9614-30 |