Part Details for FQB34N20LTM by Fairchild Semiconductor Corporation
Overview of FQB34N20LTM by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FQB34N20LTM
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 31 A, 200 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | 50 |
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$3.3000 / $4.9500 | Buy Now |
Part Details for FQB34N20LTM
FQB34N20LTM CAD Models
FQB34N20LTM Part Data Attributes:
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FQB34N20LTM
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FQB34N20LTM
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 31A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, D2PAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | D2PAK | |
| Package Description | ROHS COMPLIANT, D2PAK-3 | |
| Pin Count | 2 | |
| Manufacturer Package Code | 2LD,TO263, SURFACE MOUNT | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 640 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 31 A | |
| Drain-source On Resistance-Max | 0.08 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 180 W | |
| Pulsed Drain Current-Max (IDM) | 124 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQB34N20LTM
This table gives cross-reference parts and alternative options found for FQB34N20LTM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQB34N20LTM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQB34N20LTM | Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 31 A, 80 mΩ, D2PAK, 800-REEL | onsemi | FQB34N20LTM vs FQB34N20LTM |
| FQB34N20L | Power Field-Effect Transistor, 31A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | onsemi | FQB34N20LTM vs FQB34N20L |