Part Details for FQA7N80 by Fairchild Semiconductor Corporation
Overview of FQA7N80 by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for FQA7N80
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | 7.2A, 800V, 1.5ohm, N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 780 |
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$1.2200 / $1.4300 | Buy Now |
Part Details for FQA7N80
FQA7N80 CAD Models
FQA7N80 Part Data Attributes
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FQA7N80
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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FQA7N80
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 7.2A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-3P | |
Package Description | TO-3P, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 580 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 7.2 A | |
Drain-source On Resistance-Max | 1.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 198 W | |
Pulsed Drain Current-Max (IDM) | 28.8 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FQA7N80
This table gives cross-reference parts and alternative options found for FQA7N80. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQA7N80, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFS620 | Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | FQA7N80 vs IRFS620 |
SPP47N10 | Power Field-Effect Transistor, 47A I(D), 100V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | FQA7N80 vs SPP47N10 |
IXFH14N80 | Power Field-Effect Transistor, 14A I(D), 800V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | Littelfuse Inc | FQA7N80 vs IXFH14N80 |
STP13NK50Z | 11A, 500V, 0.48ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | FQA7N80 vs STP13NK50Z |
RFD14N06 | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | Harris Semiconductor | FQA7N80 vs RFD14N06 |
SPP80N06S2L-06 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | FQA7N80 vs SPP80N06S2L-06 |
STW20NM60FD | N-CHANNEL 600V 0.26 Ohm 20A TO-247 FDmesh™ POWER MOSFET | STMicroelectronics | FQA7N80 vs STW20NM60FD |
IXFH28N50Q | Power Field-Effect Transistor, 28A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 | IXYS Corporation | FQA7N80 vs IXFH28N50Q |
IXFH26N50S | Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247SMD, 3 PIN | IXYS Corporation | FQA7N80 vs IXFH26N50S |
IXTK33N50 | Power Field-Effect Transistor, 33A I(D), 500V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN | Littelfuse Inc | FQA7N80 vs IXTK33N50 |