Part Details for FPD750SOT343E by Qorvo
Overview of FPD750SOT343E by Qorvo
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Part Details for FPD750SOT343E
FPD750SOT343E CAD Models
FPD750SOT343E Part Data Attributes
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FPD750SOT343E
Qorvo
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Datasheet
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FPD750SOT343E
Qorvo
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC PACKAGE-4
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | QORVO INC | |
| Package Description | SMALL OUTLINE, R-PDSO-G4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 6 V | |
| FET Technology | HIGH ELECTRON MOBILITY | |
| Highest Frequency Band | S BAND | |
| JESD-30 Code | R-PDSO-G4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | DEPLETION MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | GALLIUM ARSENIDE |
Alternate Parts for FPD750SOT343E
This table gives cross-reference parts and alternative options found for FPD750SOT343E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FPD750SOT343E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FPD750SOT343CE | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, ROHS COMPLIANT, PLASTIC PACKAGE-4 | Qorvo | FPD750SOT343E vs FPD750SOT343CE |
| FPD750SOT89CE | RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, High Electron Mobility FET, ROHS COMPLIANT PACKAGE-3 | RF Micro Devices Inc | FPD750SOT343E vs FPD750SOT89CE |
| FPD750SOT343 | RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, High Electron Mobility FET, SOT-343, 4 PIN | RF Micro Devices Inc | FPD750SOT343E vs FPD750SOT343 |
| FPD750SOT89CE | RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, High Electron Mobility FET, ROHS COMPLIANT PACKAGE-3 | Qorvo | FPD750SOT343E vs FPD750SOT89CE |
| FPD750 | RF Power Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, DIE | RF Micro Devices Inc | FPD750SOT343E vs FPD750 |