Part Details for FGH50T65UPD by Fairchild Semiconductor Corporation
Overview of FGH50T65UPD by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Electronic Manufacturing
Price & Stock for FGH50T65UPD
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | Insulated Gate Bipolar Transistor, 100A, 650V, N-Channel, TO-247AB RoHS: Compliant Status: Active Min Qty: 1 | 43 |
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$3.1900 / $3.7500 | Buy Now |
Part Details for FGH50T65UPD
FGH50T65UPD CAD Models
FGH50T65UPD Part Data Attributes
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FGH50T65UPD
Fairchild Semiconductor Corporation
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Datasheet
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FGH50T65UPD
Fairchild Semiconductor Corporation
Insulated Gate Bipolar Transistor, 100A I(C), 650V V(BR)CES, N-Channel, TO-247AB, ROHS COMPLIANT, TO-247A03, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-247 | |
| Package Description | ROHS COMPLIANT, TO-247A03, 3 PIN | |
| Pin Count | 3 | |
| Manufacturer Package Code | TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 100 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 29 ns | |
| Gate-Emitter Thr Voltage-Max | 7.5 V | |
| Gate-Emitter Voltage-Max | 25 V | |
| JEDEC-95 Code | TO-247AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 340 W | |
| Rise Time-Max (tr) | 77 ns | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 185 ns | |
| Turn-on Time-Nom (ton) | 101 ns |