Part Details for FGH20N6S2 by Fairchild Semiconductor Corporation
Overview of FGH20N6S2 by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for FGH20N6S2
FGH20N6S2 CAD Models
FGH20N6S2 Part Data Attributes:
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FGH20N6S2
Fairchild Semiconductor Corporation
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Datasheet
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FGH20N6S2
Fairchild Semiconductor Corporation
Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-247 | |
Package Description | TO-247, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | LOW CONDUCTION LOSS | |
Collector Current-Max (IC) | 28 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE | |
Fall Time-Max (tf) | 105 ns | |
Gate-Emitter Thr Voltage-Max | 5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 205 ns | |
Turn-on Time-Nom (ton) | 11.5 ns |
Alternate Parts for FGH20N6S2
This table gives cross-reference parts and alternative options found for FGH20N6S2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FGH20N6S2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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GT15H101 | TRANSISTOR 15 A, 500 V, N-CHANNEL IGBT, 2-16C1C, 3 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | FGH20N6S2 vs GT15H101 |
IRGBC30FD2 | Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | International Rectifier | FGH20N6S2 vs IRGBC30FD2 |
IRGPC50U | Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC | International Rectifier | FGH20N6S2 vs IRGPC50U |
HGTD7N60C3S9A | 14A,600V, UFS Series N-Channel IGBTs, 2500-REEL | onsemi | FGH20N6S2 vs HGTD7N60C3S9A |
IRG4BC20W-STRLPBF | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | FGH20N6S2 vs IRG4BC20W-STRLPBF |
IXGH36N60A3D4 | Insulated Gate Bipolar Transistor, | Littelfuse Inc | FGH20N6S2 vs IXGH36N60A3D4 |
IRG4PH50UD | Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | Infineon Technologies AG | FGH20N6S2 vs IRG4PH50UD |
HGTG10N120BND | 1200V, NPT IGBT, 450-TUBE | onsemi | FGH20N6S2 vs HGTG10N120BND |
HGTP12N60C3DR | Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB | Fairchild Semiconductor Corporation | FGH20N6S2 vs HGTP12N60C3DR |
IXGH12N60BD1 | Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | FGH20N6S2 vs IXGH12N60BD1 |