Part Details for FF200R12KS4 by Infineon Technologies AG
Overview of FF200R12KS4 by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FF200R12KS4
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
641-FF200R12KS4
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Mouser Electronics | IGBT Modules 1200V 200A DUAL RoHS: Compliant | 0 |
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$149.0000 / $159.0800 | Order Now |
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DISTI #
73928837
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RS | Transistor, 62mm, C-series module, IGBT2, 1200V, 200A, high-frequency switching | Infineon FF200R12KS4 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 2 Weeks, 0 Days Container: Bulk | 5 |
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$146.6200 / $154.3400 | Buy Now |
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Chip1Cloud | 62mm C-Series module with the fast IGBT2 for high-frequency switching | 7600 |
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RFQ | |
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Perfect Parts Corporation | 735 |
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RFQ |
Part Details for FF200R12KS4
FF200R12KS4 CAD Models
FF200R12KS4 Part Data Attributes:
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FF200R12KS4
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
FF200R12KS4
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 275A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | MODULE | |
| Package Description | FLANGE MOUNT, R-XUFM-X7 | |
| Pin Count | 7 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | FAST | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 275 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X7 | |
| Number of Elements | 2 | |
| Number of Terminals | 7 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1400 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 590 ns | |
| Turn-on Time-Nom (ton) | 180 ns | |
| VCEsat-Max | 3.7 V |
Alternate Parts for FF200R12KS4
This table gives cross-reference parts and alternative options found for FF200R12KS4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FF200R12KS4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FF200R12KT3 | Insulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | FF200R12KS4 vs FF200R12KT3 |
| APTGT200A120G | Insulated Gate Bipolar Transistor, 280A I(C), 1200V V(BR)CES, N-Channel | Microchip Technology Inc | FF200R12KS4 vs APTGT200A120G |
| FF200R12KT3HOSA1 | Insulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | FF200R12KS4 vs FF200R12KT3HOSA1 |
| BSM200GB120DN2 | Insulated Gate Bipolar Transistor, 290A I(C), 1200V V(BR)CES, N-Channel, | Siemens | FF200R12KS4 vs BSM200GB120DN2 |
| MII300-12A4 | Insulated Gate Bipolar Transistor, 330A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Littelfuse Inc | FF200R12KS4 vs MII300-12A4 |
| CM300DU-24H | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Powerex Power Semiconductors | FF200R12KS4 vs CM300DU-24H |
| APTGF200A120D3G | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, D3, 11 PIN | Microsemi Corporation | FF200R12KS4 vs APTGF200A120D3G |
| BSM200GB120DN2HOSA1 | Insulated Gate Bipolar Transistor, 290A I(C), 1200V V(BR)CES, N-Channel, HALF-BRIDGE 2, 7 PIN | Infineon Technologies AG | FF200R12KS4 vs BSM200GB120DN2HOSA1 |
| APTGT200A120 | Insulated Gate Bipolar Transistor, 280A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Microsemi Corporation | FF200R12KS4 vs APTGT200A120 |
| FF200R12KS4HOSA1 | Insulated Gate Bipolar Transistor, 275A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | FF200R12KS4 vs FF200R12KS4HOSA1 |