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Part Details for FF11MR12W1M1B11BOMA1 by Infineon Technologies AG
Overview of FF11MR12W1M1B11BOMA1 by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Education and Research
Telecommunications
Price & Stock for FF11MR12W1M1B11BOMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
24AC8569
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Newark | Mosfet Mod, N-Ch, 1.2Kv, 100A, 0.02W, Mosfet Module Configuration:Half Bridge, Channel Type:Dual N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:1.2Kv, No. Of Pins:22Pins, Rds(On) Test Voltage:- Rohs Compliant: Yes |Infineon FF11MR12W1M1B11BOMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 1 |
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$159.7400 / $170.5600 | Buy Now |
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DISTI #
69266662
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Verical | Trans MOSFET N-CH SiC 1.2KV 100A 18-Pin EASY1B-2 Tray Min Qty: 1 Package Multiple: 1 Date Code: 2247 | Americas - 3 |
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$158.7500 | Buy Now |
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Ameya Holding Limited | Min Qty: 1 | 1 |
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$386.0580 / $410.3129 | Buy Now |
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DISTI #
C1S322000670242
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Chip1Stop | MOSFET RoHS: Compliant pbFree: No Container: Bulk | 3 |
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$127.0000 | Buy Now |
Part Details for FF11MR12W1M1B11BOMA1
FF11MR12W1M1B11BOMA1 CAD Models
FF11MR12W1M1B11BOMA1 Part Data Attributes
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FF11MR12W1M1B11BOMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
FF11MR12W1M1B11BOMA1
Infineon Technologies AG
Power Field-Effect Transistor, 100A I(D), 1200V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-18
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | MODULE-18 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 17 Weeks, 3 Days | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 100 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XUFM-X18 | |
| Number of Elements | 2 | |
| Number of Terminals | 18 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FF11MR12W1M1B11BOMA1
This table gives cross-reference parts and alternative options found for FF11MR12W1M1B11BOMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FF11MR12W1M1B11BOMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FF11MR12W1M1_B11 | Power Field-Effect Transistor, | Infineon Technologies AG | FF11MR12W1M1B11BOMA1 vs FF11MR12W1M1_B11 |