Datasheets
FDS8884 by:

Power Field-Effect Transistor, 8.5A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8

Part Details for FDS8884 by Fairchild Semiconductor Corporation

Overview of FDS8884 by Fairchild Semiconductor Corporation

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Price & Stock for FDS8884

Part # Distributor Description Stock Price Buy
Bristol Electronics   1200
RFQ
Bristol Electronics   12979
RFQ
Bristol Electronics   Min Qty: 10 775
  • 10 $0.5250
  • 40 $0.3413
  • 148 $0.1969
  • 509 $0.1680
$0.1680 / $0.5250 Buy Now
Quest Components 8.5 A, 30 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET 284
  • 1 $0.9540
  • 14 $0.4293
  • 117 $0.2862
$0.2862 / $0.9540 Buy Now
Quest Components 8.5 A, 30 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET 6495
  • 1 $0.5725
  • 700 $0.2290
  • 3,494 $0.2004
$0.2004 / $0.5725 Buy Now
Quest Components 8.5 A, 30 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET 960
  • 1 $0.6000
  • 168 $0.3000
  • 668 $0.2400
$0.2400 / $0.6000 Buy Now
Quest Components 8.5 A, 30 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET 620
  • 1 $0.7000
  • 37 $0.3500
  • 172 $0.2100
$0.2100 / $0.7000 Buy Now
Rochester Electronics Power Field-Effect Transistor, 8.5A, 30V, 0.023ohm, N-Channel, MOSFET RoHS: Compliant Status: Active Min Qty: 1 2623
  • 1 $0.2333
  • 25 $0.2286
  • 100 $0.2193
  • 500 $0.2100
  • 1,000 $0.1983
$0.1983 / $0.2333 Buy Now
Chip1Cloud MOSFET N-CH 30V 8.5A 8-SOIC 9640
RFQ
Component Electronics, Inc IN STOCK SHIP TODAY 8
  • 1 $0.7700
  • 100 $0.5800
  • 1,000 $0.5000
$0.5000 / $0.7700 Buy Now
Win Source Electronics MOSFET N-CH 30V 8.5A 8-SOIC 213504
  • 60 $0.8740
  • 140 $0.7170
  • 220 $0.6950
  • 300 $0.6720
  • 385 $0.6500
  • 515 $0.5830
$0.5830 / $0.8740 Buy Now

Part Details for FDS8884

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FDS8884 Part Data Attributes:

FDS8884 Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
FDS8884 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 8.5A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SOIC
Package Description ROHS COMPLIANT, SO-8
Pin Count 8
Manufacturer Package Code 8LD, JEDEC MS-012, .150"NARROW BODY
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature FAST SWITCHING
Avalanche Energy Rating (Eas) 32 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 8.5 A
Drain-source On Resistance-Max 0.023 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDS8884

This table gives cross-reference parts and alternative options found for FDS8884. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS8884, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDS8884 N-Channel PowerTrench® MOSFET 30V, 8.5A, 23mΩ, 2500-REEL onsemi FDS8884 vs FDS8884
Part Number Description Manufacturer Compare
IRF7807D1PBF Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier FDS8884 vs IRF7807D1PBF
IRF7807D2PBF Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier FDS8884 vs IRF7807D2PBF
IRF7807D2 Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier FDS8884 vs IRF7807D2
IRF7807D1 Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier FDS8884 vs IRF7807D1
IRF7807D2TRPBF Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier FDS8884 vs IRF7807D2TRPBF
IRF7807D1-TR Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier FDS8884 vs IRF7807D1-TR
FDS8884 N-Channel PowerTrench® MOSFET 30V, 8.5A, 23mΩ, 2500-REEL onsemi FDS8884 vs FDS8884
IRF7807D2HR Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 International Rectifier FDS8884 vs IRF7807D2HR
IRF7807D1TRHR Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 Infineon Technologies AG FDS8884 vs IRF7807D1TRHR
IRF7807D1-TRPBF Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier FDS8884 vs IRF7807D1-TRPBF

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