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N-Channel PowerTrench® MOSFET 30V, 8.5A, 23mΩ, SOIC-8, 2500-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
84Y9939
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Newark | Mosfet, N-Channel, 30V, 8.5A, Soic-8, Transistor Polarity:N Channel, Continuous Drain Current Id:8.5A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.019Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.7V, Power Rohs Compliant: Yes |Onsemi FDS8884 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 7150 |
|
$0.3180 / $0.7580 | Buy Now |
DISTI #
27AC5724
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Newark | 30V 8.5A 23 O Nch Er Tr Rohs Compliant: Yes |Onsemi FDS8884 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.2550 / $0.2590 | Buy Now |
DISTI #
86K1396
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Newark | N Channel Mosfet, 30V, 8.5A, Soic, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:8.5A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.7Vrohs Compliant: Yes |Onsemi FDS8884 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.2550 / $0.2590 | Buy Now |
DISTI #
FDS8884CT-ND
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DigiKey | MOSFET N-CH 30V 8.5A 8SOIC Min Qty: 1 Lead time: 10 Weeks Container: Digi-ReelĀ®, Cut Tape (CT), Tape & Reel (TR) |
19423 In Stock |
|
$0.2000 / $0.7500 | Buy Now |
DISTI #
FDS8884
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Avnet Americas | Trans MOSFET N-CH 30V 8.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS8884) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days Container: Reel | 32500 |
|
$0.2000 | Buy Now |
DISTI #
512-FDS8884
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Mouser Electronics | MOSFETs 30V N-Channel PwrTrench MOSFET RoHS: Compliant | 6840 |
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$0.2290 / $0.7500 | Buy Now |
DISTI #
V72:2272_06300902
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Arrow Electronics | Trans MOSFET N-CH 100V 8.5A 8-Pin SOIC T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2223 Container: Cut Strips | Americas - 4796 |
|
$0.2129 / $0.4908 | Buy Now |
DISTI #
V36:1790_06300902
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Arrow Electronics | Trans MOSFET N-CH 100V 8.5A 8-Pin SOIC T/R RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks Date Code: 2409 | Americas - 2500 |
|
$0.1934 / $0.2108 | Buy Now |
DISTI #
V79:2366_17796711
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Arrow Electronics | Trans MOSFET N-CH 100V 8.5A 8-Pin SOIC T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 36 Weeks Date Code: 2137 | Americas - 1 |
|
$0.0506 / $0.1083 | Buy Now |
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Future Electronics | N-Channel 30 V 23 mOhm 13 nC Surface Mount PowerTrench Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks Container: Reel | 2500Reel |
|
$0.1960 / $0.2100 | Buy Now |
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FDS8884
onsemi
Buy Now
Datasheet
|
Compare Parts:
FDS8884
onsemi
N-Channel PowerTrench® MOSFET 30V, 8.5A, 23mΩ, SOIC-8, 2500-REEL
|
Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | SOIC-8 | |
Package Description | SO-8 | |
Manufacturer Package Code | 751EB | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 10 Weeks | |
Samacsys Manufacturer | onsemi | |
Additional Feature | FAST SWITCHING | |
Avalanche Energy Rating (Eas) | 32 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 8.5 A | |
Drain-source On Resistance-Max | 0.023 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2.5 W | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for FDS8884. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS8884, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
FDS8884 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 8.5A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8 | FDS8884 vs FDS8884 |
IRF7807D2PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | FDS8884 vs IRF7807D2PBF |
IRF7807D2HR | International Rectifier | Check for Price | Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | FDS8884 vs IRF7807D2HR |
APM4812KC-TRG | American Power Devices Inc | Check for Price | Power Field-Effect Transistor, 8A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, GREEN, SOP-8 | FDS8884 vs APM4812KC-TRG |
RJK0369DSP-00-J0 | Renesas Electronics Corporation | Check for Price | 9A, 30V, 0.0225ohm, N-CHANNEL, Si, POWER, MOSFET, 4.90 X 3.95 MM, 1.27 MM PITCH, LEAD FREE, PLASTIC, SOP-8 | FDS8884 vs RJK0369DSP-00-J0 |
IRF7807D1-TRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | FDS8884 vs IRF7807D1-TRPBF |
IRF7807D1TRPBF | International Rectifier | Check for Price | 8.3A, 30V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, SO-8 | FDS8884 vs IRF7807D1TRPBF |
IRF7807D1 | International Rectifier | Check for Price | Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | FDS8884 vs IRF7807D1 |
IRF7807D2TRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | FDS8884 vs IRF7807D2TRPBF |