Part Details for FDS4953 by Fairchild Semiconductor Corporation
Overview of FDS4953 by Fairchild Semiconductor Corporation
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FDS4953
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 1728 |
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RFQ | ||
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Quest Components | 5 A, 30 V, 0.053 OHM, 2 CHANNEL, P-CHANNEL, SI, POWER, MOSFET | 2410 |
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$0.3188 / $0.7650 | Buy Now |
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Quest Components | 5 A, 30 V, 0.053 OHM, 2 CHANNEL, P-CHANNEL, SI, POWER, MOSFET | 1382 |
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$0.5100 / $1.2750 | Buy Now |
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ComSIT USA | DUAL 30V P-CHANNEL POWERTRENCH MOSFET Power Field-Effect Transistor, 5A I(D), 30V, 0.055ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 525 |
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RFQ |
Part Details for FDS4953
FDS4953 CAD Models
FDS4953 Part Data Attributes:
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FDS4953
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FDS4953
Fairchild Semiconductor Corporation
Dual30V P-Channel PowerTrench® MOSFET, 8LD, JEDEC MS-012, .150"NARROW BODY, 2500/TAPE REEL
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | SOIC | |
Package Description | SO-8 | |
Pin Count | 8 | |
Manufacturer Package Code | 8LD, JEDEC MS-012, .150"NARROW BODY | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 5 A | |
Drain-source On Resistance-Max | 0.055 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 2 W | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FDS4953
This table gives cross-reference parts and alternative options found for FDS4953. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS4953, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BSO303SPHXUMA1 | Power Field-Effect Transistor, 7.2A I(D), 30V, 0.021ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, SOP-8 | Infineon Technologies AG | FDS4953 vs BSO303SPHXUMA1 |
FDS9953AL86Z | Power Field-Effect Transistor, 2.9A I(D), 30V, 0.13ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | FDS4953 vs FDS9953AL86Z |
HUF76113DK8T | Power Field-Effect Transistor, 6A I(D), 30V, 0.041ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, PLASTIC, SO-8 | Fairchild Semiconductor Corporation | FDS4953 vs HUF76113DK8T |
HP4936DY | 5.8A, 30V, 0.037ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET | Intersil Corporation | FDS4953 vs HP4936DY |
BSO305N | Power Field-Effect Transistor, 6A I(D), 30V, 0.035ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Infineon Technologies AG | FDS4953 vs BSO305N |
RF1K49223 | Power Field-Effect Transistor, 2.5A I(D), 30V, 0.36ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | Harris Semiconductor | FDS4953 vs RF1K49223 |
HAT1038R | 3.5A, 60V, 0.23ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, MS-012AA, FP-8DA, SOP-8 | Renesas Electronics Corporation | FDS4953 vs HAT1038R |
RF1K4922396 | 2.5A, 30V, 0.36ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, MS-012AA | Intersil Corporation | FDS4953 vs RF1K4922396 |
NDS9953AD84Z | Power Field-Effect Transistor, 2.9A I(D), 30V, 0.13ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | FDS4953 vs NDS9953AD84Z |
BSO303SPH | Power Field-Effect Transistor, 7.2A I(D), 30V, 0.021ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8 | Infineon Technologies AG | FDS4953 vs BSO303SPH |