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Transistors Power Field-Effect Transistors FDP16AN08A0

Transistors
FDP16AN08A0
Description: Power Field-Effect Transistor, 9A I(D), 75V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

Overview of FDP16AN08A0 by Fairchild Semiconductor Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for FDP16AN08A0 by Fairchild Semiconductor Corporation

Part # Manufacturer Description Stock Price Buy
DISTI # 2156-FDP16AN08A0-ND
DigiKey MOSFET N-CH 75V 9A/58A TO220-3 Min Qty: 330 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 3200
In Stock
  • 330 $0.9100
$0.9100 Buy Now
Rochester Electronics Power Field-Effect Transistor, 9A, 75V, 0.016ohm, N-Channel, MOSFET, TO-220AB RoHS: Compliant Status: Active Min Qty: 1 3935
  • 1 $0.9204
  • 25 $0.9020
  • 100 $0.8652
  • 500 $0.8284
  • 1,000 $0.7823
$0.7823 / $0.9204 Buy Now

CAD Models for FDP16AN08A0 by Fairchild Semiconductor Corporation
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Part Data Attributes for FDP16AN08A0 by Fairchild Semiconductor Corporation
Parametric Data

FDP16AN08A0
Fairchild Semiconductor Corporation
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
TO-220
Package Description
TO-220AB, 3 PIN
Pin Count
3
Manufacturer Package Code
TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
117 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
75 V
Drain Current-Max (ID)
9 A
Drain-source On Resistance-Max
0.016 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
135 W
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
MATTE TIN
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. FDP16AN08A0
    Fairchild Semiconductor Corporation
    Power Field-Effect Transistor, 9A I(D), 75V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
    VS

Alternate Parts for FDP16AN08A0

This table gives cross-reference parts and alternative options found for FDP16AN08A0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDP16AN08A0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
NDP706A TRANSISTOR 75 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power National Semiconductor Corporation FDP16AN08A0 vs NDP706A
IRFS620 Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor FDP16AN08A0 vs IRFS620
934057024118 75A, 30V, 0.0152ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3 NXP Semiconductors FDP16AN08A0 vs 934057024118
STH8NA60 8A, 600V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 STMicroelectronics FDP16AN08A0 vs STH8NA60
IPP45N06S4L-08 Power Field-Effect Transistor, 45A I(D), 60V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG FDP16AN08A0 vs IPP45N06S4L-08
FDB2572 Power Field-Effect Transistor, 4A I(D), 150V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN Fairchild Semiconductor Corporation FDP16AN08A0 vs FDB2572
PHD3055L 12A, 60V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-3 NXP Semiconductors FDP16AN08A0 vs PHD3055L
IRF610B_FP001 Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-220, 3 PIN Fairchild Semiconductor Corporation FDP16AN08A0 vs IRF610B_FP001
FDP18N50 Power Field-Effect Transistor, 18A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN Fairchild Semiconductor Corporation FDP16AN08A0 vs FDP18N50
NTP15N40 15A, 400V, 0.26ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN onsemi FDP16AN08A0 vs NTP15N40

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