FDP16AN08A0
vs
PHD3055L
feature comparison
Pbfree Code |
Yes
|
|
Rohs Code |
Yes
|
No
|
Part Life Cycle Code |
Transferred
|
Obsolete
|
Ihs Manufacturer |
FAIRCHILD SEMICONDUCTOR CORP
|
NXP SEMICONDUCTORS
|
Part Package Code |
TO-220
|
|
Package Description |
TO-220AB, 3 PIN
|
SMALL OUTLINE, R-PSSO-G2
|
Pin Count |
3
|
3
|
Manufacturer Package Code |
TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
|
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.95
|
|
Avalanche Energy Rating (Eas) |
117 mJ
|
25 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
75 V
|
60 V
|
Drain Current-Max (ID) |
9 A
|
12 A
|
Drain-source On Resistance-Max |
0.016 Ω
|
0.18 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-220AB
|
|
JESD-30 Code |
R-PSFM-T3
|
R-PSSO-G2
|
JESD-609 Code |
e3
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
175 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
135 W
|
50 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
YES
|
Terminal Finish |
MATTE TIN
|
|
Terminal Form |
THROUGH-HOLE
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
3
|
Additional Feature |
|
LOGIC LEVEL COMPATIBLE
|
Pulsed Drain Current-Max (IDM) |
|
48 A
|
|
|
|
Compare FDP16AN08A0 with alternatives
Compare PHD3055L with alternatives