Part Details for FDN306P by Fairchild Semiconductor Corporation
Overview of FDN306P by Fairchild Semiconductor Corporation
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FDN306P
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 2987 |
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RFQ | ||
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Bristol Electronics | 80 |
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RFQ | ||
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Quest Components | 2600 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET | 2301 |
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$0.3500 / $1.0000 | Buy Now |
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Chip 1 Exchange | INSTOCK | 5886 |
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RFQ | |
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Chip 1 Exchange | INSTOCK | 6252 |
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RFQ | |
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Chip1Cloud | MOSFET P-CH 12V 2.6A SSOT3 | 2601 |
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RFQ | |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 29 |
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$0.3000 / $0.4600 | Buy Now |
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Sense Electronic Company Limited | SOT23 | 975 |
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RFQ | |
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Win Source Electronics | MOSFET P-CH 12V 2.6A SSOT3 | 800000 |
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$0.1320 / $0.1980 | Buy Now |
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Wuhan P&S | 12V,2.6A, P-Channel MOSFET Min Qty: 1 | 30000 |
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$0.1700 / $0.3500 | Buy Now |
Part Details for FDN306P
FDN306P CAD Models
FDN306P Part Data Attributes:
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FDN306P
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FDN306P
Fairchild Semiconductor Corporation
Small Signal Field-Effect Transistor, 2.6A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | SSOT | |
Package Description | SUPERSOT-3 | |
Pin Count | 3 | |
Manufacturer Package Code | MOLDED PACKAGE, SUPERSOT, 3 LEAD | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.95 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 12 V | |
Drain Current-Max (ID) | 2.6 A | |
Drain-source On Resistance-Max | 0.04 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 0.5 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FDN306P
This table gives cross-reference parts and alternative options found for FDN306P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDN306P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FDN306PD87Z | Small Signal Field-Effect Transistor, 2.6A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 | Fairchild Semiconductor Corporation | FDN306P vs FDN306PD87Z |
FDN306P | P-Channel 1.8V Specified PowerTrench® MOSFET -12V, -2.6A, 40mΩ, 3000-REEL | onsemi | FDN306P vs FDN306P |