Part Details for FDFS6N303 by Fairchild Semiconductor Corporation
Overview of FDFS6N303 by Fairchild Semiconductor Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FDFS6N303
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 7 | 4350 |
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$0.1950 / $0.7500 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, SO | 3480 |
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$0.2500 / $1.0000 | Buy Now |
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Rochester Electronics | 6A, 30V, 0.035ohm, N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 86405 |
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$0.2707 / $0.3185 | Buy Now |
Part Details for FDFS6N303
FDFS6N303 CAD Models
FDFS6N303 Part Data Attributes:
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FDFS6N303
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FDFS6N303
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 6A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | SOT | |
Package Description | SO-8 | |
Pin Count | 8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 6 A | |
Drain-source On Resistance-Max | 0.035 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2 W | |
Pulsed Drain Current-Max (IDM) | 30 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FDFS6N303
This table gives cross-reference parts and alternative options found for FDFS6N303. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDFS6N303, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
BSO303SPHXUMA1 | Power Field-Effect Transistor, 7.2A I(D), 30V, 0.021ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, SOP-8 | Infineon Technologies AG | FDFS6N303 vs BSO303SPHXUMA1 |
FDS9953AL86Z | Power Field-Effect Transistor, 2.9A I(D), 30V, 0.13ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | FDFS6N303 vs FDS9953AL86Z |
HUF76113DK8T | Power Field-Effect Transistor, 6A I(D), 30V, 0.041ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, PLASTIC, SO-8 | Fairchild Semiconductor Corporation | FDFS6N303 vs HUF76113DK8T |
HP4936DY | 5.8A, 30V, 0.037ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET | Intersil Corporation | FDFS6N303 vs HP4936DY |
BSO305N | Power Field-Effect Transistor, 6A I(D), 30V, 0.035ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Infineon Technologies AG | FDFS6N303 vs BSO305N |
RF1K49223 | Power Field-Effect Transistor, 2.5A I(D), 30V, 0.36ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | Harris Semiconductor | FDFS6N303 vs RF1K49223 |
HAT1038R | 3.5A, 60V, 0.23ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, MS-012AA, FP-8DA, SOP-8 | Renesas Electronics Corporation | FDFS6N303 vs HAT1038R |
RF1K4922396 | 2.5A, 30V, 0.36ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, MS-012AA | Intersil Corporation | FDFS6N303 vs RF1K4922396 |
NDS9953AD84Z | Power Field-Effect Transistor, 2.9A I(D), 30V, 0.13ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | FDFS6N303 vs NDS9953AD84Z |
BSO303SPH | Power Field-Effect Transistor, 7.2A I(D), 30V, 0.021ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8 | Infineon Technologies AG | FDFS6N303 vs BSO303SPH |