Datasheets
FDD8880_NL by:

Power Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, D2PAK-3

Part Details for FDD8880_NL by Fairchild Semiconductor Corporation

Overview of FDD8880_NL by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for FDD8880_NL

Part # Distributor Description Stock Price Buy
DISTI # 2156-FDD8880_NL-ND
DigiKey N-CHANNEL POWER MOSFET Min Qty: 777 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 777
In Stock
  • 777 $0.4400
$0.4400 Buy Now
Quest Components   206
  • 1 $1.6680
  • 16 $1.0008
  • 61 $0.8340
$0.8340 / $1.6680 Buy Now
Rochester Electronics 35A, 30V, 0.015ohm, N-Channel Power MOSFET, TO-252AA ' RoHS: Compliant Status: Obsolete Min Qty: 1 777
  • 1 $0.4436
  • 25 $0.4347
  • 100 $0.4170
  • 500 $0.3992
  • 1,000 $0.3771
$0.3771 / $0.4436 Buy Now

Part Details for FDD8880_NL

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FDD8880_NL Part Data Attributes:

FDD8880_NL Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
FDD8880_NL Fairchild Semiconductor Corporation Power Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, D2PAK-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-252AA
Package Description LEAD FREE, D2PAK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 53 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 35 A
Drain-source On Resistance-Max 0.015 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 55 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDD8880_NL

This table gives cross-reference parts and alternative options found for FDD8880_NL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDD8880_NL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
ISL9N310AD3ST 35A, 30V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC FDD8880_NL vs ISL9N310AD3ST
ISL9N310AD3ST Power Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Fairchild Semiconductor Corporation FDD8880_NL vs ISL9N310AD3ST
FDD8880 35A, 30V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 Rochester Electronics LLC FDD8880_NL vs FDD8880
FDD8880 Power Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Fairchild Semiconductor Corporation FDD8880_NL vs FDD8880
FDD8880_NL 35A, 30V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, LEAD FREE, D2PAK-3 Rochester Electronics LLC FDD8880_NL vs FDD8880_NL
FDD8880 N-Channel PowerTrench® MOSFET 30V, 58A, 9mΩ, 2500-REEL onsemi FDD8880_NL vs FDD8880
ISL9N310AD3ST 35A, 30V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation FDD8880_NL vs ISL9N310AD3ST
Part Number Description Manufacturer Compare
ISL9N310AD3ST Power Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Fairchild Semiconductor Corporation FDD8880_NL vs ISL9N310AD3ST
ISL9N310AD3ST 35A, 30V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation FDD8880_NL vs ISL9N310AD3ST
FDD8880 Power Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Fairchild Semiconductor Corporation FDD8880_NL vs FDD8880
FDD8880 35A, 30V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 Rochester Electronics LLC FDD8880_NL vs FDD8880
FDD8880_NL 35A, 30V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, LEAD FREE, D2PAK-3 Rochester Electronics LLC FDD8880_NL vs FDD8880_NL
FDD8880 N-Channel PowerTrench® MOSFET 30V, 58A, 9mΩ, 2500-REEL onsemi FDD8880_NL vs FDD8880
ISL9N310AD3ST 35A, 30V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC FDD8880_NL vs ISL9N310AD3ST

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