Part Details for FDD8880 by Rochester Electronics LLC
Overview of FDD8880 by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (5 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for FDD8880
FDD8880 CAD Models
FDD8880 Part Data Attributes:
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FDD8880
Rochester Electronics LLC
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Datasheet
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FDD8880
Rochester Electronics LLC
35A, 30V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
Part Package Code | TO-252AA | |
Package Description | DPAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
Avalanche Energy Rating (Eas) | 53 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 35 A | |
Drain-source On Resistance-Max | 0.015 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | COMMERCIAL | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FDD8880
This table gives cross-reference parts and alternative options found for FDD8880. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDD8880, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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ISL9N310AD3ST_NL | Power Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Fairchild Semiconductor Corporation | FDD8880 vs ISL9N310AD3ST_NL |
FDD8880 | N-Channel PowerTrench® MOSFET 30V, 58A, 9mΩ, 2500-REEL | onsemi | FDD8880 vs FDD8880 |
FDD8880_NL | Power Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, D2PAK-3 | Fairchild Semiconductor Corporation | FDD8880 vs FDD8880_NL |
FDD8880 | Power Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Fairchild Semiconductor Corporation | FDD8880 vs FDD8880 |
FDD8880_NL | 35A, 30V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, LEAD FREE, D2PAK-3 | Rochester Electronics LLC | FDD8880 vs FDD8880_NL |