Datasheets
FDD6685 by:

Power Field-Effect Transistor, 11A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN

Part Details for FDD6685 by Fairchild Semiconductor Corporation

Overview of FDD6685 by Fairchild Semiconductor Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for FDD6685

Part # Distributor Description Stock Price Buy
Bristol Electronics   77
RFQ
Quest Components 11 A, 30 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 61
  • 1 $100.0000
  • 12 $85.0000
  • 25 $80.0000
$80.0000 / $100.0000 Buy Now
Chip1Cloud MOSFET P-CH 30V 11A DPAK 18237
RFQ
Win Source Electronics MOSFET P-CH 30V 11A DPAK 26100
  • 19 $2.7650
  • 45 $2.2690
  • 69 $2.1980
  • 95 $2.1270
  • 122 $2.0560
  • 163 $1.8440
$1.8440 / $2.7650 Buy Now

Part Details for FDD6685

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FDD6685 Part Data Attributes:

FDD6685 Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
FDD6685 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 11A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code DPAK
Package Description TO-252, 3 PIN
Pin Count 3
Manufacturer Package Code TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.02 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 52 W
Pulsed Drain Current-Max (IDM) 100 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDD6685

This table gives cross-reference parts and alternative options found for FDD6685. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDD6685, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDD6685_NL Power Field-Effect Transistor, 11A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN Fairchild Semiconductor Corporation FDD6685 vs FDD6685_NL
FDD6685 30V P-Channel PowerTrench® MOSFET -40A, 20mΩ, 2500-REEL onsemi FDD6685 vs FDD6685
Part Number Description Manufacturer Compare
AP6679GP-A TRANSISTOR 65 A, 40 V, 0.0135 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power Advanced Power Electronics Corp FDD6685 vs AP6679GP-A
SUD09P10-195-GE3 Power Field-Effect Transistor, 8.8A I(D), 100V, 0.195ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies FDD6685 vs SUD09P10-195-GE3
AP18P10GI TRANSISTOR 12 A, 100 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220CFM, 3 PIN, FET General Purpose Power Advanced Power Electronics Corp FDD6685 vs AP18P10GI
AP6679GP-HF TRANSISTOR POWER, FET, FET General Purpose Power Advanced Power Electronics Corp FDD6685 vs AP6679GP-HF
AP13P15GP TRANSISTOR 13 A, 150 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power Advanced Power Electronics Corp FDD6685 vs AP13P15GP
AP4419GH TRANSISTOR 25 A, 35 V, 0.038 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power Advanced Power Electronics Corp FDD6685 vs AP4419GH
AP6679GS-A TRANSISTOR 65 A, 40 V, 0.0135 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power Advanced Power Electronics Corp FDD6685 vs AP6679GS-A
SUD45P03-15A Power Field-Effect Transistor, 15A I(D), 30V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3/2 PIN Vishay Intertechnologies FDD6685 vs SUD45P03-15A
AP9560GH-HF TRANSISTOR 52 A, 40 V, 0.012 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power Advanced Power Electronics Corp FDD6685 vs AP9560GH-HF
SUD50P04-13L-GE3 TRANSISTOR POWER, FET, FET General Purpose Power Vishay Siliconix FDD6685 vs SUD50P04-13L-GE3

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