Part Details for FDD6030BL by Fairchild Semiconductor Corporation
Overview of FDD6030BL by Fairchild Semiconductor Corporation
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (4 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FDD6030BL
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-FDD6030BL-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 268 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
71201 In Stock |
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$1.1200 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-252AA | 4528 |
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$0.7615 / $1.8130 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-252AA | 167 |
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$1.4504 / $2.9008 | Buy Now |
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Rochester Electronics | 42A, 30V, 0.016ohm, N-Channel Power MOSFET, TO-252 ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 71201 |
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$0.9669 / $1.1400 | Buy Now |
Part Details for FDD6030BL
FDD6030BL CAD Models
FDD6030BL Part Data Attributes:
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FDD6030BL
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FDD6030BL
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 42A I(D), 30V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-252 | |
| Package Description | DPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 130 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 42 A | |
| Drain-source On Resistance-Max | 0.016 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 44 W | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDD6030BL
This table gives cross-reference parts and alternative options found for FDD6030BL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDD6030BL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDD8878 | 35A, 30V, 0.0185ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 | Rochester Electronics LLC | FDD6030BL vs FDD8878 |
| FDD8878 | Power Field-Effect Transistor, 35A I(D), 30V, 0.0185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Fairchild Semiconductor Corporation | FDD6030BL vs FDD8878 |
| FDD8878 | N-Channel PowerTrench® MOSFET 30V, 40A, 15mΩ, 2500-REEL | onsemi | FDD6030BL vs FDD8878 |
| FDD8878_NL | Power Field-Effect Transistor, 35A I(D), 30V, 0.0185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | Fairchild Semiconductor Corporation | FDD6030BL vs FDD8878_NL |