Part Details for FDD8878_NL by Fairchild Semiconductor Corporation
Overview of FDD8878_NL by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (6 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for FDD8878_NL
FDD8878_NL CAD Models
FDD8878_NL Part Data Attributes
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FDD8878_NL
Fairchild Semiconductor Corporation
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Datasheet
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FDD8878_NL
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 35A I(D), 30V, 0.0185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-252AA | |
Package Description | LEAD FREE, DPAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 25 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 35 A | |
Drain-source On Resistance-Max | 0.0185 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 40 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FDD8878_NL
This table gives cross-reference parts and alternative options found for FDD8878_NL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDD8878_NL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FDD8878 | N-Channel PowerTrench® MOSFET 30V, 40A, 15mΩ, 2500-REEL | onsemi | FDD8878_NL vs FDD8878 |
ISL9N315AD3ST | 30A, 30V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA, 2 PIN | Rochester Electronics LLC | FDD8878_NL vs ISL9N315AD3ST |
ISL9N315AD3ST | Power Field-Effect Transistor, 30A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 2 PIN | Fairchild Semiconductor Corporation | FDD8878_NL vs ISL9N315AD3ST |
FDD6030BL | 42A, 30V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | Rochester Electronics LLC | FDD8878_NL vs FDD6030BL |
FDD8878 | Power Field-Effect Transistor, 35A I(D), 30V, 0.0185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Fairchild Semiconductor Corporation | FDD8878_NL vs FDD8878 |
ISL9N318AD3ST | Power Field-Effect Transistor, 30A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Fairchild Semiconductor Corporation | FDD8878_NL vs ISL9N318AD3ST |