Datasheets
FDD4243 by:

Power Field-Effect Transistor, 6.7A I(D), 40V, 0.064ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK, 3 PIN

Part Details for FDD4243 by Fairchild Semiconductor Corporation

Overview of FDD4243 by Fairchild Semiconductor Corporation

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Price & Stock for FDD4243

Part # Distributor Description Stock Price Buy
Bristol Electronics   26
RFQ
Bristol Electronics   129
RFQ
Rochester Electronics Power Field-Effect Transistor, 6.7A, 40V, 0.064ohm, P-Channel, MOSFET, TO-252 RoHS: Compliant Status: Active Min Qty: 1 19
  • 1 $0.3612
  • 25 $0.3540
  • 100 $0.3395
  • 500 $0.3251
  • 1,000 $0.3070
$0.3070 / $0.3612 Buy Now
Sense Electronic Company Limited TO-252 4235
RFQ
Win Source Electronics Trans MOSFET P-CH Si 40V 6.7A 3-Pin(2+Tab) DPAK T/R / MOSFET P-CH 40V 6.7A DPAK 255000
  • 65 $0.7920
  • 155 $0.6500
  • 240 $0.6290
  • 330 $0.6090
  • 425 $0.5890
  • 570 $0.5280
$0.5280 / $0.7920 Buy Now

Part Details for FDD4243

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FDD4243 Part Data Attributes

FDD4243 Fairchild Semiconductor Corporation
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FDD4243 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 6.7A I(D), 40V, 0.064ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code DPAK
Package Description ROHS COMPLIANT, DPAK, 3 PIN
Pin Count 3
Manufacturer Package Code TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
Reach Compliance Code not_compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 84 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 6.7 A
Drain-source On Resistance-Max 0.064 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-XSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 42 W
Pulsed Drain Current-Max (IDM) 60 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

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