Part Details for FDB3652-F085 by onsemi
Overview of FDB3652-F085 by onsemi
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FDB3652-F085
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
48AC0887
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Newark | Nmos D2Pak 100V 16 Mohm/Reel Rohs Compliant: Yes |Onsemi FDB3652-F085 Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
DISTI #
73AK0986
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Newark | Mosfet's - Single |Onsemi FDB3652-F085 Min Qty: 220 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$1.4900 / $1.8400 | Buy Now |
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Rochester Electronics | N-Channel PowerTrench MOSFET, 100V, 61A, 16m RoHS: Not Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 3307 |
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$1.4200 / $1.6700 | Buy Now |
Part Details for FDB3652-F085
FDB3652-F085 CAD Models
FDB3652-F085 Part Data Attributes:
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FDB3652-F085
onsemi
Buy Now
Datasheet
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Compare Parts:
FDB3652-F085
onsemi
N-Channel PowerTrench® MOSFET, 100V, 61A, 16mΩ, TO-263 2L (D2PAK), 800-REEL, Automotive Qualified
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Pbfree Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | TO-263 2L (D2PAK) | |
Package Description | ROHS COMPLIANT PACKAGE-3 | |
Manufacturer Package Code | 418AJ | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 182 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 9 A | |
Drain-source On Resistance-Max | 0.016 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 245 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 150 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FDB3652-F085
This table gives cross-reference parts and alternative options found for FDB3652-F085. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDB3652-F085, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FDB3652 | N-Channel PowerTrench® MOSFET, 100V, 61A, 16mΩ, 800-REEL | onsemi | FDB3652-F085 vs FDB3652 |
FDB3652_NL | Power Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE PACKAGE-3 | Fairchild Semiconductor Corporation | FDB3652-F085 vs FDB3652_NL |
FQB70N08TM | 70A, 80V, 0.017ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | Rochester Electronics LLC | FDB3652-F085 vs FQB70N08TM |