FDB3652-F085 vs NVB6412ANT4G feature comparison

FDB3652-F085 onsemi

Buy Now Datasheet

NVB6412ANT4G onsemi

Buy Now Datasheet
Pbfree Code Yes Yes
Part Life Cycle Code End Of Life Obsolete
Ihs Manufacturer ONSEMI ON SEMICONDUCTOR
Part Package Code TO-263 2L (D2PAK) D2PAK 2 LEAD
Package Description ROHS COMPLIANT PACKAGE-3 CASE 418B-04, D2PAK-3/2
Manufacturer Package Code 418AJ 418B-04
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi onsemi
Avalanche Energy Rating (Eas) 182 mJ 300 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 9 A 58 A
Drain-source On Resistance-Max 0.016 Ω 0.0182 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 245 NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 150 W 167 W
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) - annealed Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Pin Count 3
Pulsed Drain Current-Max (IDM) 240 A
Reference Standard AEC-Q101

Compare FDB3652-F085 with alternatives

Compare NVB6412ANT4G with alternatives