Part Details for FDB3632 by Fairchild Semiconductor Corporation
Overview of FDB3632 by Fairchild Semiconductor Corporation
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FDB3632
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 42 |
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RFQ | ||
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Bristol Electronics | 53 |
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RFQ | ||
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Bristol Electronics | Min Qty: 2 | 111 |
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$1.1250 / $3.0000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-263AB | 88 |
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$1.5000 / $4.0000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-263AB | 9 |
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$10.0000 / $15.0000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-263AB | 1118 |
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$2.2500 / $4.5000 | Buy Now |
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ComSIT USA | MOSFET-Power, N-Channel, POWERTRENCH Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | Europe - 1022 |
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RFQ | |
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Chip1Cloud | MOSFET N-CH 100V 80A D2PAK | 20000 |
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RFQ |
Part Details for FDB3632
FDB3632 CAD Models
FDB3632 Part Data Attributes
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FDB3632
Fairchild Semiconductor Corporation
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Datasheet
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Compare Parts:
FDB3632
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263AB, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | D2PAK | |
Package Description | ROHS COMPLIANT, TO-263AB, 3 PIN | |
Pin Count | 2 | |
Manufacturer Package Code | 2LD,TO263, SURFACE MOUNT | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 337 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 12 A | |
Drain-source On Resistance-Max | 0.009 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 245 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 310 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FDB3632
This table gives cross-reference parts and alternative options found for FDB3632. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDB3632, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FDB3632_NL | Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263AB, 3 PIN | Fairchild Semiconductor Corporation | FDB3632 vs FDB3632_NL |