Part Details for FDA16N50-F109 by onsemi
Overview of FDA16N50-F109 by onsemi
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FDA16N50-F109
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
48AC0864
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Newark | N-Channel UnifetTm Mosfet 500V, 16.5A, 380 M/Tube |Onsemi FDA16N50-F109 Min Qty: 450 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$1.5100 / $1.5500 | Buy Now |
DISTI #
FDA16N50-F109OS-ND
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DigiKey | MOSFET N-CH 500V 16.5A TO3PN Min Qty: 1 Lead time: 26 Weeks Container: Tube |
239 In Stock |
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$1.4129 / $3.0300 | Buy Now |
DISTI #
FDA16N50-F109
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Avnet Americas | Trans MOSFET N-CH 500V 16.5A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FDA16N50-F109) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 26 Weeks, 0 Days Container: Tube | 0 |
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$1.5146 / $1.6954 | Buy Now |
DISTI #
512-FDA16N50_F109
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Mouser Electronics | MOSFET 500V 16.5A NCH | 98 |
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$1.4100 / $2.9900 | Buy Now |
DISTI #
V36:1790_06359581
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Arrow Electronics | Trans MOSFET N-CH 500V 16.5A 3-Pin(3+Tab) TO-3P Tube Min Qty: 1 Package Multiple: 1 Lead time: 26 Weeks | Americas - 420 |
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$1.3540 / $2.7690 | Buy Now |
DISTI #
E02:0323_00840491
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Arrow Electronics | Trans MOSFET N-CH 500V 16.5A 3-Pin(3+Tab) TO-3P Tube Min Qty: 30 Package Multiple: 30 Lead time: 26 Weeks Date Code: 2419 | Europe - 240 |
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$1.5837 / $1.9132 | Buy Now |
DISTI #
81012819
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Verical | Trans MOSFET N-CH 500V 16.5A 3-Pin(3+Tab) TO-3P Tube Min Qty: 30 Package Multiple: 30 Date Code: 2419 | Americas - 240 |
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$2.6220 | Buy Now |
DISTI #
FDA16N50-F109
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 450 | 0 |
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$1.4100 | Buy Now |
DISTI #
FDA16N50-F109
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Avnet Silica | Trans MOSFET N-CH 500V 16.5A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FDA16N50-F109) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 27 Weeks, 0 Days | Silica - 900 |
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Buy Now | |
DISTI #
C1S541901590417
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Chip1Stop | MOSFET RoHS: Compliant Container: Tube | 480 |
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$1.8200 / $2.7600 | Buy Now |
Part Details for FDA16N50-F109
FDA16N50-F109 CAD Models
FDA16N50-F109 Part Data Attributes
|
FDA16N50-F109
onsemi
Buy Now
Datasheet
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Compare Parts:
FDA16N50-F109
onsemi
Power MOSFET, N-Channel, UniFETTM, 500 V, 16.5 A, 380 mΩ, TO-3P, TO-3PN 3L, 450-TUBE
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Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | TO-3PN 3L | |
Package Description | TO-3PN, 3 PIN | |
Manufacturer Package Code | 340BZ | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | onsemi | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 780 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 16.5 A | |
Drain-source On Resistance-Max | 0.38 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 205 W | |
Pulsed Drain Current-Max (IDM) | 66 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FDA16N50-F109
This table gives cross-reference parts and alternative options found for FDA16N50-F109. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDA16N50-F109, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFS620 | Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | FDA16N50-F109 vs IRFS620 |
SPP47N10 | Power Field-Effect Transistor, 47A I(D), 100V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | FDA16N50-F109 vs SPP47N10 |
IXFH14N80 | Power Field-Effect Transistor, 14A I(D), 800V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | Littelfuse Inc | FDA16N50-F109 vs IXFH14N80 |
STP13NK50Z | 11A, 500V, 0.48ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | FDA16N50-F109 vs STP13NK50Z |
RFD14N06 | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | Harris Semiconductor | FDA16N50-F109 vs RFD14N06 |
SPP80N06S2L-06 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | FDA16N50-F109 vs SPP80N06S2L-06 |
STW20NM60FD | N-CHANNEL 600V 0.26 Ohm 20A TO-247 FDmesh™ POWER MOSFET | STMicroelectronics | FDA16N50-F109 vs STW20NM60FD |
IXFH28N50Q | Power Field-Effect Transistor, 28A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 | IXYS Corporation | FDA16N50-F109 vs IXFH28N50Q |
IXFH26N50S | Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247SMD, 3 PIN | IXYS Corporation | FDA16N50-F109 vs IXFH26N50S |
IXTK33N50 | Power Field-Effect Transistor, 33A I(D), 500V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN | Littelfuse Inc | FDA16N50-F109 vs IXTK33N50 |