Datasheets
F1207 by:

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Part Details for F1207 by Polyfet RF Devices

Overview of F1207 by Polyfet RF Devices

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Part Details for F1207

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F1207 Part Data Attributes:

F1207 Polyfet RF Devices
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F1207 Polyfet RF Devices Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer POLYFET R F DEVICES
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE
Drain Current-Max (ID) 4 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Number of Elements 1
Operating Temperature-Max 200 °C
Polarity/Channel Type N-CHANNEL

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