Memory
EDS1232AABB-60-E
Elpida Memory Inc
Description: Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, FBGA-90

Overview of EDS1232AABB-60-E by Elpida Memory Inc

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Part Data Attributes for EDS1232AABB-60-E by Elpida Memory Inc

EDS1232AABB-60-E
Elpida Memory Inc
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
ELPIDA MEMORY INC
Part Package Code
BGA
Package Description
TFBGA, BGA90,9X15,32
Pin Count
90
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.02
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
5.4 ns
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
166 MHz
I/O Type
COMMON
Interleaved Burst Length
1,2,4,8
JESD-30 Code
R-PBGA-B90
JESD-609 Code
e1
Length
13 mm
Memory Density
134217728 bit
Memory IC Type
SYNCHRONOUS DRAM
Memory Width
32
Number of Functions
1
Number of Ports
1
Number of Terminals
90
Number of Words
4194304 words
Number of Words Code
4000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
4MX32
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
TFBGA
Package Equivalence Code
BGA90,9X15,32
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status
Not Qualified
Refresh Cycles
4096
Seated Height-Max
1.07 mm
Self Refresh
YES
Sequential Burst Length
1,2,4,8,FP
Standby Current-Max
0.001 A
Supply Current-Max
0.28 mA
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
3 V
Supply Voltage-Nom (Vsup)
3.3 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Finish
TIN SILVER COPPER
Terminal Form
BALL
Terminal Pitch
0.8 mm
Terminal Position
BOTTOM
Width
8 mm
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  1. EDS1232AABB-60-E
    Elpida Memory Inc
    Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, FBGA-90
    VS

Alternate Parts for EDS1232AABB-60-E

This table gives cross-reference parts and alternative options found for EDS1232AABB-60-E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of EDS1232AABB-60-E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IS42S32400E-6BL Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, FBGA-90 Integrated Silicon Solution Inc EDS1232AABB-60-E vs IS42S32400E-6BL
IS42S32400-6BL Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 13 X 8 MM, 0.80 MM PITCH, LEAD FREE, MO-207, FBGA-90 Integrated Silicon Solution Inc EDS1232AABB-60-E vs IS42S32400-6BL
IS42S32400B-6B Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, FBGA-90 Integrated Silicon Solution Inc EDS1232AABB-60-E vs IS42S32400B-6B
IS42S32400E-6B Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, FBGA-90 Integrated Silicon Solution Inc EDS1232AABB-60-E vs IS42S32400E-6B
IS42S32400D-6BL Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Integrated Silicon Solution Inc EDS1232AABB-60-E vs IS42S32400D-6BL
IS42S32400B-6BL Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Integrated Silicon Solution Inc EDS1232AABB-60-E vs IS42S32400B-6BL
Part Number Description Manufacturer Compare
HY57V283220TP-55 Synchronous DRAM, 4MX32, 5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, LEAD FREE, TSOP2-86 SK Hynix Inc EDS1232AABB-60-E vs HY57V283220TP-55
MT48LC4M32B2B5-8XTES:G Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, FBGA-90 Micron Technology Inc EDS1232AABB-60-E vs MT48LC4M32B2B5-8XTES:G
IS42SM32400E-6BLI Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90 Integrated Silicon Solution Inc EDS1232AABB-60-E vs IS42SM32400E-6BLI
IS45S32400B-7BA1 Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, MINI, FBGA-90 Integrated Silicon Solution Inc EDS1232AABB-60-E vs IS45S32400B-7BA1
HY57V283220TP-S Synchronous DRAM, 4MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, LEAD FREE, TSOP2-86 SK Hynix Inc EDS1232AABB-60-E vs HY57V283220TP-S
MT48LC4M32B2B5-6AAAT:L Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, PLASTIC, VFBGA-90 Micron Technology Inc EDS1232AABB-60-E vs MT48LC4M32B2B5-6AAAT:L
HY57V283220LTP-8 Synchronous DRAM, 4MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, LEAD FREE, TSOP2-86 SK Hynix Inc EDS1232AABB-60-E vs HY57V283220LTP-8
K4S283233E-DE750 Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, 11 X 13 MM, LEAD FREE, FBGA-90 Samsung Semiconductor EDS1232AABB-60-E vs K4S283233E-DE750
HY57V283220T-8I Synchronous DRAM, 4MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 SK Hynix Inc EDS1232AABB-60-E vs HY57V283220T-8I
MT48LC4M32B2B5-7AT:L Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, (8 X 13) MM, LEAD FREE, PLASTIC, VFBGA-90 Micron Technology Inc EDS1232AABB-60-E vs MT48LC4M32B2B5-7AT:L

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