Memory
MT48LC4M32B2B5-8XTES:G
Micron Technology Inc
Description: Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, FBGA-90

Overview of MT48LC4M32B2B5-8XTES:G by Micron Technology Inc

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Where used in Applications: Consumer Electronics Internet of Things (IoT) Computing and Data Storage Entertainment and Gaming

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Part Data Attributes for MT48LC4M32B2B5-8XTES:G by Micron Technology Inc

MT48LC4M32B2B5-8XTES:G
Micron Technology Inc
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
MICRON TECHNOLOGY INC
Part Package Code
BGA
Package Description
VFBGA,
Pin Count
90
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.02
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
5.5 ns
Additional Feature
AUTO/SELF REFRESH
JESD-30 Code
R-PBGA-B90
JESD-609 Code
e1
Length
13 mm
Memory Density
134217728 bit
Memory IC Type
SYNCHRONOUS DRAM
Memory Width
32
Number of Functions
1
Number of Ports
1
Number of Terminals
90
Number of Words
4194304 words
Number of Words Code
4000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
85 °C
Operating Temperature-Min
-40 °C
Organization
4MX32
Package Body Material
PLASTIC/EPOXY
Package Code
VFBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Qualification Status
Not Qualified
Seated Height-Max
1 mm
Self Refresh
YES
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
3 V
Supply Voltage-Nom (Vsup)
3.3 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
INDUSTRIAL
Terminal Finish
TIN SILVER COPPER
Terminal Form
BALL
Terminal Pitch
0.8 mm
Terminal Position
BOTTOM
Width
8 mm
Want to compare parts?
  1. MT48LC4M32B2B5-8XTES:G
    Micron Technology Inc
    Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, FBGA-90
    VS

Alternate Parts for MT48LC4M32B2B5-8XTES:G

This table gives cross-reference parts and alternative options found for MT48LC4M32B2B5-8XTES:G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT48LC4M32B2B5-8XTES:G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
M12L128324A-6BG Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 13 X 8 MM, LEAD FREE, FBGA-90 Elite Semiconductor Memory Technology Inc MT48LC4M32B2B5-8XTES:G vs M12L128324A-6BG
IS42SM32400G-6BLI Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90 Integrated Silicon Solution Inc MT48LC4M32B2B5-8XTES:G vs IS42SM32400G-6BLI
MT48LC4M32B2F5-7ES:G Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, FBGA-90 Micron Technology Inc MT48LC4M32B2B5-8XTES:G vs MT48LC4M32B2F5-7ES:G
MT48LC4M32B2B5-7AT Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, (8 X 13) MM, LEAD FREE, PLASTIC, VFBGA-90 Micron Technology Inc MT48LC4M32B2B5-8XTES:G vs MT48LC4M32B2B5-7AT
IS42VM32400G-6BLI Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90 Integrated Silicon Solution Inc MT48LC4M32B2B5-8XTES:G vs IS42VM32400G-6BLI
MT48LC4M32B2F5-7AT 4MX32 SYNCHRONOUS DRAM, 5.5ns, PBGA90, (8 X 13) MM, PLASTIC, VFBGA-90 Micron Technology Inc MT48LC4M32B2B5-8XTES:G vs MT48LC4M32B2F5-7AT
Part Number Description Manufacturer Compare
HY57V283220TP-55 Synchronous DRAM, 4MX32, 5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, LEAD FREE, TSOP2-86 SK Hynix Inc MT48LC4M32B2B5-8XTES:G vs HY57V283220TP-55
IS42SM32400E-6BLI Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90 Integrated Silicon Solution Inc MT48LC4M32B2B5-8XTES:G vs IS42SM32400E-6BLI
IS45S32400B-7BA1 Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, MINI, FBGA-90 Integrated Silicon Solution Inc MT48LC4M32B2B5-8XTES:G vs IS45S32400B-7BA1
HY57V283220TP-S Synchronous DRAM, 4MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, LEAD FREE, TSOP2-86 SK Hynix Inc MT48LC4M32B2B5-8XTES:G vs HY57V283220TP-S
MT48LC4M32B2B5-6AAAT:L Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, PLASTIC, VFBGA-90 Micron Technology Inc MT48LC4M32B2B5-8XTES:G vs MT48LC4M32B2B5-6AAAT:L
HY57V283220LTP-8 Synchronous DRAM, 4MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, LEAD FREE, TSOP2-86 SK Hynix Inc MT48LC4M32B2B5-8XTES:G vs HY57V283220LTP-8
K4S283233E-DE750 Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, 11 X 13 MM, LEAD FREE, FBGA-90 Samsung Semiconductor MT48LC4M32B2B5-8XTES:G vs K4S283233E-DE750
HY57V283220T-8I Synchronous DRAM, 4MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 SK Hynix Inc MT48LC4M32B2B5-8XTES:G vs HY57V283220T-8I
MT48LC4M32B2B5-7AT:L Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, (8 X 13) MM, LEAD FREE, PLASTIC, VFBGA-90 Micron Technology Inc MT48LC4M32B2B5-8XTES:G vs MT48LC4M32B2B5-7AT:L
MT48LC4M32B2B5-7 Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, (8 X 13) MM, LEAD FREE, PLASTIC, VFBGA-90 Micron Technology Inc MT48LC4M32B2B5-8XTES:G vs MT48LC4M32B2B5-7

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