Part Details for EDE1108AASE-6E-E by Elpida Memory Inc
Overview of EDE1108AASE-6E-E by Elpida Memory Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (4 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Computing and Data Storage
Part Details for EDE1108AASE-6E-E
EDE1108AASE-6E-E CAD Models
EDE1108AASE-6E-E Part Data Attributes
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EDE1108AASE-6E-E
Elpida Memory Inc
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Datasheet
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EDE1108AASE-6E-E
Elpida Memory Inc
DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA68, ROHS COMPLIANT, FBGA-68
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ELPIDA MEMORY INC | |
Part Package Code | BGA | |
Package Description | TFBGA, BGA68,9X19,32 | |
Pin Count | 68 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.32 | |
Access Mode | MULTI BANK PAGE BURST | |
Access Time-Max | 0.45 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 333 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 4,8 | |
JESD-30 Code | R-PBGA-B68 | |
JESD-609 Code | e1 | |
Length | 20.7 mm | |
Memory Density | 1073741824 bit | |
Memory IC Type | DDR2 DRAM | |
Memory Width | 8 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 68 | |
Number of Words | 134217728 words | |
Number of Words Code | 128000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | ||
Organization | 128MX8 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TFBGA | |
Package Equivalence Code | BGA68,9X19,32 | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
Peak Reflow Temperature (Cel) | 260 | |
Qualification Status | Not Qualified | |
Refresh Cycles | 8192 | |
Seated Height-Max | 1.12 mm | |
Self Refresh | YES | |
Sequential Burst Length | 4,8 | |
Supply Voltage-Max (Vsup) | 1.9 V | |
Supply Voltage-Min (Vsup) | 1.7 V | |
Supply Voltage-Nom (Vsup) | 1.8 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | OTHER | |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
Terminal Form | BALL | |
Terminal Pitch | 0.8 mm | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | 50 | |
Width | 10.2 mm |
Alternate Parts for EDE1108AASE-6E-E
This table gives cross-reference parts and alternative options found for EDE1108AASE-6E-E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of EDE1108AASE-6E-E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
HY5PS1G831LF-Y5 | DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA68, FBGA-68 | SK Hynix Inc | EDE1108AASE-6E-E vs HY5PS1G831LF-Y5 |
HY5PS1G831ALFP-Y5 | DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA68, FBGA-68 | SK Hynix Inc | EDE1108AASE-6E-E vs HY5PS1G831ALFP-Y5 |
HY5PS1G831F-Y5 | DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA68, FBGA-68 | SK Hynix Inc | EDE1108AASE-6E-E vs HY5PS1G831F-Y5 |
NT5TU128M8BJ-3C | DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA68, GREEN, BGA-68 | Nanya Technology Corporation | EDE1108AASE-6E-E vs NT5TU128M8BJ-3C |