EDE1108AASE-6E-E
vs
HYB18T1G800BC-3S
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
ELPIDA MEMORY INC
|
QIMONDA AG
|
| Part Package Code |
BGA
|
BGA
|
| Package Description |
TFBGA, BGA68,9X19,32
|
TFBGA, BGA68,9X19,32
|
| Pin Count |
68
|
68
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.32
|
8542.32.00.32
|
| Access Mode |
MULTI BANK PAGE BURST
|
FOUR BANK PAGE BURST
|
| Access Time-Max |
0.45 ns
|
0.45 ns
|
| Additional Feature |
AUTO/SELF REFRESH
|
AUTO/SELF REFRESH
|
| Clock Frequency-Max (fCLK) |
333 MHz
|
333 MHz
|
| I/O Type |
COMMON
|
COMMON
|
| Interleaved Burst Length |
4,8
|
4,8
|
| JESD-30 Code |
R-PBGA-B68
|
R-PBGA-B68
|
| JESD-609 Code |
e1
|
|
| Length |
20.7 mm
|
17 mm
|
| Memory Density |
1073741824 bit
|
1073741824 bit
|
| Memory IC Type |
DDR2 DRAM
|
DDR2 DRAM
|
| Memory Width |
8
|
8
|
| Number of Functions |
1
|
1
|
| Number of Ports |
1
|
1
|
| Number of Terminals |
68
|
68
|
| Number of Words |
134217728 words
|
134217728 words
|
| Number of Words Code |
128000000
|
128000000
|
| Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
| Operating Temperature-Max |
85 °C
|
|
| Operating Temperature-Min |
|
|
| Organization |
128MX8
|
128MX8
|
| Output Characteristics |
3-STATE
|
3-STATE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
TFBGA
|
TFBGA
|
| Package Equivalence Code |
BGA68,9X19,32
|
BGA68,9X19,32
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
GRID ARRAY, THIN PROFILE, FINE PITCH
|
GRID ARRAY, THIN PROFILE, FINE PITCH
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Refresh Cycles |
8192
|
8192
|
| Seated Height-Max |
1.12 mm
|
1.2 mm
|
| Self Refresh |
YES
|
YES
|
| Sequential Burst Length |
4,8
|
4,8
|
| Supply Voltage-Max (Vsup) |
1.9 V
|
1.9 V
|
| Supply Voltage-Min (Vsup) |
1.7 V
|
1.7 V
|
| Supply Voltage-Nom (Vsup) |
1.8 V
|
1.8 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
OTHER
|
|
| Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu)
|
|
| Terminal Form |
BALL
|
BALL
|
| Terminal Pitch |
0.8 mm
|
0.8 mm
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
50
|
|
| Width |
10.2 mm
|
10 mm
|
| Base Number Matches |
1
|
1
|
| Moisture Sensitivity Level |
|
3
|
| Supply Current-Max |
|
0.23 mA
|
|
|
|
Compare EDE1108AASE-6E-E with alternatives
Compare HYB18T1G800BC-3S with alternatives