Part Details for EBE26UC6AASA-4A-E by Elpida Memory Inc
Overview of EBE26UC6AASA-4A-E by Elpida Memory Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for EBE26UC6AASA-4A-E
EBE26UC6AASA-4A-E CAD Models
EBE26UC6AASA-4A-E Part Data Attributes
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EBE26UC6AASA-4A-E
Elpida Memory Inc
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Datasheet
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EBE26UC6AASA-4A-E
Elpida Memory Inc
DDR DRAM Module, 32MX64, 0.6ns, CMOS, LEAD FREE, SODIMM-200
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ELPIDA MEMORY INC | |
| Part Package Code | MODULE | |
| Package Description | DIMM, | |
| Pin Count | 200 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Access Mode | DUAL BANK PAGE BURST | |
| Access Time-Max | 0.6 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| JESD-30 Code | R-XDMA-N200 | |
| Memory Density | 2147483648 bit | |
| Memory IC Type | DDR DRAM MODULE | |
| Memory Width | 64 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 200 | |
| Number of Words | 33554432 words | |
| Number of Words Code | 32000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | ||
| Organization | 32MX64 | |
| Package Body Material | UNSPECIFIED | |
| Package Code | DIMM | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Qualification Status | Not Qualified | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL |
Alternate Parts for EBE26UC6AASA-4A-E
This table gives cross-reference parts and alternative options found for EBE26UC6AASA-4A-E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of EBE26UC6AASA-4A-E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| M368L3324BUM-LCC | DDR DRAM Module, 32MX64, 0.65ns, CMOS, ROHS COMPLIANT, DIMM-184 | Samsung Semiconductor | EBE26UC6AASA-4A-E vs M368L3324BUM-LCC |
| V916632B24QAFW-E4 | DDR DRAM Module, 32MX64, 0.5ns, CMOS, ROHS COMPLIANT, SODIMM-200 | ProMOS Technologies Inc | EBE26UC6AASA-4A-E vs V916632B24QAFW-E4 |
| M368L3324BUM-LAA | DDR DRAM Module, 32MX64, 0.75ns, CMOS, ROHS COMPLIANT, DIMM-184 | Samsung Semiconductor | EBE26UC6AASA-4A-E vs M368L3324BUM-LAA |
| NT256D64SH8C0GM-75B | DDR DRAM Module, 32MX64, 0.75ns, CMOS, SODIMM-200 | Nanya Technology Corporation | EBE26UC6AASA-4A-E vs NT256D64SH8C0GM-75B |
| V826632K24SXTG-D0 | DDR DRAM Module, 32MX64, 0.65ns, CMOS, DIMM-184 | Mosel Vitelic Corporation | EBE26UC6AASA-4A-E vs V826632K24SXTG-D0 |
| HYMP532S64CLP6-E3 | DDR DRAM Module, 32MX64, 0.6ns, CMOS, ROHS COMPLIANT, DIMM-200 | SK Hynix Inc | EBE26UC6AASA-4A-E vs HYMP532S64CLP6-E3 |
| VR4CU326428CBK | DDR DRAM Module, 32MX64, 0.7ns, CMOS, ROHS COMPLIANT, DIMM-184 | Viking Technology | EBE26UC6AASA-4A-E vs VR4CU326428CBK |
| M470T3354BZ3-CCC | DDR DRAM Module, 32MX64, 0.6ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Samsung Semiconductor | EBE26UC6AASA-4A-E vs M470T3354BZ3-CCC |
| NT256D64SH8BAGM-75B | DDR DRAM Module, 32MX64, 0.75ns, CMOS, SODIMM-200 | Nanya Technology Corporation | EBE26UC6AASA-4A-E vs NT256D64SH8BAGM-75B |
| WV3EG6434S335BD4SG | DDR DRAM Module, 32MX64, 0.7ns, CMOS, ROHS COMPLIANT, SO-DIMM-200 | Microsemi Corporation | EBE26UC6AASA-4A-E vs WV3EG6434S335BD4SG |