Datasheets
DU2820S by:

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,

Part Details for DU2820S by MACOM

Overview of DU2820S by MACOM

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Applications Space Technology Aerospace and Defense Energy and Power Systems

Price & Stock for DU2820S

Part # Distributor Description Stock Price Buy
DISTI # 1465-DU2820S-ND
DigiKey RF MOSFET N-CHANNEL 28V Min Qty: 50 Lead time: 24 Weeks Container: Bulk Temporarily Out of Stock
  • 50 $48.3892
$48.3892 Buy Now
DISTI # 937-DU2820S
Mouser Electronics RF MOSFET Transistors Transistor.Mosfet,20W,28V,2-175MHz RoHS: Compliant 54
  • 1 $53.2300
  • 10 $48.3900
  • 20 $46.4200
  • 60 $45.1500
  • 100 $43.5400
$43.5400 / $53.2300 Buy Now
DISTI # DU2820S
Richardson RFPD RF POWER TRANSISTOR RoHS: Compliant Min Qty: 60 0
  • 60 $38.3300
$38.3300 Buy Now

Part Details for DU2820S

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DU2820S Part Data Attributes

DU2820S MACOM
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DU2820S MACOM RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer M/A-COM TECHNOLOGY SOLUTIONS INC
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.75
Samacsys Manufacturer MACOM
Configuration SINGLE
DS Breakdown Voltage-Min 65 V
Drain Current-Max (ID) 24 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 8 pF
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code O-CRFM-F4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 200 °C
Operating Temperature-Min -55 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 62.5 W
Power Dissipation-Max (Abs) 61 W
Power Gain-Min (Gp) 13 dB
Qualification Status Not Qualified
Surface Mount NO
Terminal Form FLAT
Terminal Position RADIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for DU2820S

This table gives cross-reference parts and alternative options found for DU2820S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DU2820S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
DU2810S VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET TE Connectivity DU2820S vs DU2810S
BLF245,112 BLF245 NXP Semiconductors DU2820S vs BLF245,112
MRF171A RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 211-07, 4 PIN MACOM DU2820S vs MRF171A
UF2820P RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MACOM DU2820S vs UF2820P
DU1215S VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET TE Connectivity DU2820S vs DU1215S
MRF136 RF Power Field-Effect Transistor, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.380 INCH, FM-4 Advanced Semiconductor Inc DU2820S vs MRF136
MRF137 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 211-07, 4 PIN TE Connectivity DU2820S vs MRF137
SD2902 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, PLASTIC, M113, 4 PIN STMicroelectronics DU2820S vs SD2902
MRF136Y 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 319B-02, 4 PIN TE Connectivity DU2820S vs MRF136Y
MRF137 RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, Advanced Semiconductor Inc DU2820S vs MRF137

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