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Part Details for DMNH6021SK3-13 by Diodes Incorporated
Overview of DMNH6021SK3-13 by Diodes Incorporated
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
Price & Stock for DMNH6021SK3-13
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
DMNH6021SK3-13-ND
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DigiKey | MOSFET N-CH 60V 50A TO252 Min Qty: 2500 Lead time: 20 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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$0.2625 / $0.3022 | Buy Now |
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DISTI #
DMNH6021SK3-13
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Avnet Americas | MOSFET BVDSS: 41V~60V TO252 T&R 2.5K - Tape and Reel (Alt: DMNH6021SK3-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 20 Weeks, 0 Days Container: Reel | 5000 Factory Stock |
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$0.2604 / $0.3076 | Buy Now |
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DISTI #
621-DMNH6021SK3-13
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Mouser Electronics | MOSFET MOSFET BVDSS: 41V-60V | 0 |
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$0.3000 / $0.8000 | Order Now |
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Future Electronics | Single N-Channel 60 V 3.7 W 20.1 nC Silicon Surface Mount Mosfet - TO-252-3 RoHS: Non Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 20 Weeks | 0 |
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$0.2770 | Buy Now |
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DISTI #
DMNH6021SK3-13
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Avnet Silica | MOSFET BVDSS: 41V~60V TO252 T&R 2.5K (Alt: DMNH6021SK3-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 22 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for DMNH6021SK3-13
DMNH6021SK3-13 CAD Models
DMNH6021SK3-13 Part Data Attributes
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DMNH6021SK3-13
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
DMNH6021SK3-13
Diodes Incorporated
Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Package Description | DPAK-3/2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Samacsys Manufacturer | Diodes Incorporated | |
| Additional Feature | HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 64 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.028 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for DMNH6021SK3-13
This table gives cross-reference parts and alternative options found for DMNH6021SK3-13. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DMNH6021SK3-13, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFN054SCV | Power Field-Effect Transistor, 55A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN | Infineon Technologies AG | DMNH6021SK3-13 vs IRFN054SCV |
| DMNH6021SK3Q-13 | Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2 | Diodes Incorporated | DMNH6021SK3-13 vs DMNH6021SK3Q-13 |
| IRFN054R4 | Power Field-Effect Transistor, 45A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-220SM, 3 PIN | TT Electronics Resistors | DMNH6021SK3-13 vs IRFN054R4 |
| IRFN054 | Power Field-Effect Transistor, 55A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN | Infineon Technologies AG | DMNH6021SK3-13 vs IRFN054 |
| IRFN054R4 | 45A, 60V, 0.031ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, TO-220SM, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | DMNH6021SK3-13 vs IRFN054R4 |
| IRFN054PBF | Power Field-Effect Transistor, 55A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN | Infineon Technologies AG | DMNH6021SK3-13 vs IRFN054PBF |