DMNH6021SK3-13
vs
IRFN054R4
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
DIODES INC
|
TT ELECTRONICS PLC
|
| Package Description |
DPAK-3/2
|
CHIP CARRIER, R-XBCC-N3
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
20 Weeks
|
|
| Samacsys Manufacturer |
Diodes Incorporated
|
|
| Additional Feature |
HIGH RELIABILITY
|
|
| Avalanche Energy Rating (Eas) |
64 mJ
|
480 mJ
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
60 V
|
60 V
|
| Drain Current-Max (ID) |
50 A
|
45 A
|
| Drain-source On Resistance-Max |
0.028 Ω
|
0.031 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-252
|
|
| JESD-30 Code |
R-PSSO-G2
|
R-XBCC-N3
|
| JESD-609 Code |
e3
|
e4
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
UNSPECIFIED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
CHIP CARRIER
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
80 A
|
180 A
|
| Reference Standard |
AEC-Q101
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Matte Tin (Sn)
|
GOLD
|
| Terminal Form |
GULL WING
|
NO LEAD
|
| Terminal Position |
SINGLE
|
BOTTOM
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Operating Temperature-Max |
|
150 °C
|
| Qualification Status |
|
Not Qualified
|
|
|
|
Compare DMNH6021SK3-13 with alternatives
Compare IRFN054R4 with alternatives