Datasheets
DG648BH45 by:

Gate Turn-Off SCR, 1170000mA I(T), 4500V V(DRM),

Part Details for DG648BH45 by Dynex Semiconductor

Overview of DG648BH45 by Dynex Semiconductor

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Applications Education and Research Consumer Electronics Audio and Video Systems Aerospace and Defense Entertainment and Gaming Communication and Networking

Part Details for DG648BH45

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DG648BH45 Part Data Attributes:

DG648BH45 Dynex Semiconductor
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DG648BH45 Dynex Semiconductor Gate Turn-Off SCR, 1170000mA I(T), 4500V V(DRM),
Pbfree Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer GEC PLESSEY SEMICONDUCTORS
Package Description ,
Pin Count 4
Reach Compliance Code unknown
ECCN Code EAR99
DC Gate Trigger Current-Max 3000 mA
DC Gate Trigger Voltage-Max 1 V
Non-Repetitive Pk On-state Cur 16000 A
On-State Voltage-Max 3.2 V
On-state Current-Max 1170000 A
Operating Temperature-Max 125 °C
Operating Temperature-Min -40 °C
Repetitive Peak Off-state Voltage 4500 V
Surface Mount NO
Trigger Device Type GATE TURN-OFF SCR

Alternate Parts for DG648BH45

This table gives cross-reference parts and alternative options found for DG648BH45. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DG648BH45, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
WG20045SN Gate Turn-Off SCR, 1730A I(T)RMS, 870000mA I(T), 4500V V(DRM), 18V V(RRM), 1 Element IXYS Corporation DG648BH45 vs WG20045SN
G2000NC450 Gate Turn-Off SCR, 1730A I(T)RMS, 4500V V(DRM), 1800V V(RRM), 1 Element IXYS Corporation DG648BH45 vs G2000NC450
WG20045SN Silicon Controlled Rectifier, 1730 A, 4500 V, GATE TURN-OFF SCR IXYS UK Westcode DG648BH45 vs WG20045SN

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