CM75DU-12H
Description: Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel,

Overview of CM75DU-12H by Mitsubishi Electric

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Where used in Applications: Industrial Automation Electronic Manufacturing

Price & Stock for CM75DU-12H by Mitsubishi Electric

Part # Manufacturer Description Stock Price Buy
DISTI # 09B2244
Newark Igbt, Module, 600V, 75A, Continuous Collector Current:75A, Collector Emitter Saturation Voltage:2.4V, Power Dissipation:310W, Operating Temperature Max:150°C, Igbt Termination:Tab, Collector Emitter Voltage Max:600V, Product Range:- Rohs Compliant: No |Mitsubishi Electric CM75DU-12H RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
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Part Data Attributes for CM75DU-12H by Mitsubishi Electric

CM75DU-12H
Mitsubishi Electric
-
-
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Not Recommended
Ihs Manufacturer
MITSUBISHI ELECTRIC CORP
Package Description
FLANGE MOUNT, R-XUFM-X7
Reach Compliance Code
unknown
ECCN Code
EAR99
Case Connection
ISOLATED
Collector Current-Max (IC)
75 A
Collector-Emitter Voltage-Max
600 V
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max
20 V
JESD-30 Code
R-XUFM-X7
Number of Elements
2
Number of Terminals
7
Operating Temperature-Max
150 °C
Package Body Material
UNSPECIFIED
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
310 W
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
UNSPECIFIED
Terminal Position
UPPER
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
MOTOR CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
500 ns
Turn-on Time-Nom (ton)
350 ns
VCEsat-Max
3 V
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    Mitsubishi Electric
    Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel,
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Alternate Parts for CM75DU-12H

This table gives cross-reference parts and alternative options found for CM75DU-12H. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CM75DU-12H, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
CM75DU-12H Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, MODULE-7 Powerex Power Semiconductors CM75DU-12H vs CM75DU-12H
Part Number Description Manufacturer Compare
MG75J2YS40 TRANSISTOR 75 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor Toshiba America Electronic Components CM75DU-12H vs MG75J2YS40
CM75DY-12H Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, Mitsubishi Electric CM75DU-12H vs CM75DY-12H
2MBI50N-060 Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, MODULE-7 Fuji Electric Co Ltd CM75DU-12H vs 2MBI50N-060
2MBI75N-060 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, MODULE-7 Fuji Electric Co Ltd CM75DU-12H vs 2MBI75N-060
MG50J2YS91 TRANSISTOR 50 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor Toshiba America Electronic Components CM75DU-12H vs MG50J2YS91
CM75DU-12H Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, MODULE-7 Powerex Power Semiconductors CM75DU-12H vs CM75DU-12H
MG50J2YS50 TRANSISTOR 50 A, 600 V, N-CHANNEL IGBT, 2-94D1A, 7 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components CM75DU-12H vs MG50J2YS50
2MBI75L-060 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, M218, 7 PIN Fuji Electric Co Ltd CM75DU-12H vs 2MBI75L-060

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