Datasheets
CM75DY-12H by:

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel,

Part Details for CM75DY-12H by Mitsubishi Electric

Overview of CM75DY-12H by Mitsubishi Electric

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Applications Industrial Automation Electronic Manufacturing

Part Details for CM75DY-12H

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CM75DY-12H Part Data Attributes

CM75DY-12H Mitsubishi Electric
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CM75DY-12H Mitsubishi Electric Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel,
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer MITSUBISHI ELECTRIC CORP
Package Description FLANGE MOUNT, R-XUFM-X7
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature SUPER FAST RECOVERY
Case Connection ISOLATED
Collector Current-Max (IC) 75 A
Collector-Emitter Voltage-Max 600 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 310 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 500 ns
Turn-on Time-Nom (ton) 420 ns
VCEsat-Max 2.8 V

Alternate Parts for CM75DY-12H

This table gives cross-reference parts and alternative options found for CM75DY-12H. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CM75DY-12H, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MG75J2YS40 TRANSISTOR 75 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor Toshiba America Electronic Components CM75DY-12H vs MG75J2YS40
2MBI50N-060 Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, MODULE-7 Fuji Electric Co Ltd CM75DY-12H vs 2MBI50N-060
2MBI75N-060 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, MODULE-7 Fuji Electric Co Ltd CM75DY-12H vs 2MBI75N-060
MG50J2YS91 TRANSISTOR 50 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor Toshiba America Electronic Components CM75DY-12H vs MG50J2YS91
CM75DU-12H Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, MODULE-7 Powerex Power Semiconductors CM75DY-12H vs CM75DU-12H
CM75DU-12H Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, Mitsubishi Electric CM75DY-12H vs CM75DU-12H
MG50J2YS50 TRANSISTOR 50 A, 600 V, N-CHANNEL IGBT, 2-94D1A, 7 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components CM75DY-12H vs MG50J2YS50
2MBI75L-060 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, M218, 7 PIN Fuji Electric Co Ltd CM75DY-12H vs 2MBI75L-060

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