Datasheets
CM50DY-24H by:

Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel,

Part Details for CM50DY-24H by Mitsubishi Electric

Overview of CM50DY-24H by Mitsubishi Electric

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Applications Industrial Automation Electronic Manufacturing

Part Details for CM50DY-24H

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CM50DY-24H Part Data Attributes:

CM50DY-24H Mitsubishi Electric
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CM50DY-24H Mitsubishi Electric Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel,
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer MITSUBISHI ELECTRIC CORP
Package Description FLANGE MOUNT, R-XUFM-X7
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature SUPER FAST RECOVERY
Case Connection ISOLATED
Collector Current-Max (IC) 50 A
Collector-Emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 400 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 500 ns
Turn-on Time-Nom (ton) 280 ns
VCEsat-Max 3.4 V

Alternate Parts for CM50DY-24H

This table gives cross-reference parts and alternative options found for CM50DY-24H. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CM50DY-24H, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MG50Q2YS50 TRANSISTOR 78 A, 1200 V, N-CHANNEL IGBT, 2-94D4A, 7 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components CM50DY-24H vs MG50Q2YS50
CM75DY-24H Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, Powerex Power Semiconductors CM50DY-24H vs CM75DY-24H
BSM75GB120DN2 Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG CM50DY-24H vs BSM75GB120DN2
MG75Q2YS11 TRANSISTOR 75 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor Toshiba America Electronic Components CM50DY-24H vs MG75Q2YS11
MG75Q2YS50 TRANSISTOR 100 A, 1200 V, N-CHANNEL IGBT, 2-94D4A, 7 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components CM50DY-24H vs MG75Q2YS50
MG25Q2YS40 TRANSISTOR 25 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor Toshiba America Electronic Components CM50DY-24H vs MG25Q2YS40
MG50Q2YS9 TRANSISTOR 50 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor Toshiba America Electronic Components CM50DY-24H vs MG50Q2YS9
BSM50GB120DN2HOSA1 Insulated Gate Bipolar Transistor, 78A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG CM50DY-24H vs BSM50GB120DN2HOSA1
MG75Q2YS1 TRANSISTOR 75 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor Toshiba America Electronic Components CM50DY-24H vs MG75Q2YS1
CM75DU-24H Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 Powerex Power Semiconductors CM50DY-24H vs CM75DU-24H

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