Datasheets
CFH120-08 by:

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Silicon, N-Channel, High Electron Mobility FET, PLASTIC, MW-4, 4 PIN

Part Details for CFH120-08 by TriQuint Semiconductor

Overview of CFH120-08 by TriQuint Semiconductor

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Part Details for CFH120-08

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CFH120-08 Part Data Attributes:

CFH120-08 TriQuint Semiconductor
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CFH120-08 TriQuint Semiconductor RF Small Signal Field-Effect Transistor, 1-Element, K Band, Silicon, N-Channel, High Electron Mobility FET, PLASTIC, MW-4, 4 PIN
Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer TRIQUINT SEMICONDUCTOR INC
Package Description PLASTIC, MW-4, 4 PIN
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature LOW NOISE
Configuration SINGLE
DS Breakdown Voltage-Min 3 V
Drain Current-Max (ID) 0.04 A
FET Technology HIGH ELECTRON MOBILITY
Highest Frequency Band K BAND
JESD-30 Code R-PDSO-G4
Number of Elements 1
Number of Terminals 4
Operating Mode DEPLETION MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Gain-Min (Gp) 11.5 dB
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for CFH120-08

This table gives cross-reference parts and alternative options found for CFH120-08. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CFH120-08, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
CFH120-08 RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, PLASTIC, MW-4, 4 PIN Infineon Technologies AG CFH120-08 vs CFH120-08
Part Number Description Manufacturer Compare
NE425S01-T1B RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET, NEC Electronics America Inc CFH120-08 vs NE425S01-T1B
MGF4318E RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, GD-4, 4 PIN Mitsubishi Electric CFH120-08 vs MGF4318E
CFH800 RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, High Electron Mobility FET, ROHS COMPLIANT, MINIATURE, SC-70, 4 PIN TriQuint Semiconductor CFH120-08 vs CFH800
CFH800 RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, High Electron Mobility FET, Infineon Technologies AG CFH120-08 vs CFH800
NE76118 RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, NEC Electronics America Inc CFH120-08 vs NE76118
NE425S01 KU BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET Renesas Electronics Corporation CFH120-08 vs NE425S01
FHX14LG RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, CASE LG, 4 PIN FUJITSU Limited CFH120-08 vs FHX14LG
NE76038 RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET California Eastern Laboratories (CEL) CFH120-08 vs NE76038
NE72218-T2-58 RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET NEC Electronics Group CFH120-08 vs NE72218-T2-58
MGF4919G RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, GD-16, 4 PIN Mitsubishi Electric CFH120-08 vs MGF4919G

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