Datasheets
BUZ102S-4 by:

Power Field-Effect Transistor, 6.4A I(D), 55V, 0.028ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DSO-28

Part Details for BUZ102S-4 by Siemens

Overview of BUZ102S-4 by Siemens

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for BUZ102S-4

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BUZ102S-4 Part Data Attributes:

BUZ102S-4 Siemens
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BUZ102S-4 Siemens Power Field-Effect Transistor, 6.4A I(D), 55V, 0.028ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DSO-28
Part Life Cycle Code Transferred
Ihs Manufacturer SIEMENS A G
Part Package Code SOT
Package Description SMALL OUTLINE, R-PDSO-G28
Pin Count 28
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 245 mJ
Configuration SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 6.4 A
Drain-source On Resistance-Max 0.028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G28
Number of Elements 4
Number of Terminals 28
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 25.6 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Element Material SILICON

Alternate Parts for BUZ102S-4

This table gives cross-reference parts and alternative options found for BUZ102S-4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ102S-4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BUZ102S-4 Power Field-Effect Transistor, 6.4A I(D), 55V, 0.028ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DSO-28 Infineon Technologies AG BUZ102S-4 vs BUZ102S-4
Part Number Description Manufacturer Compare
BUZ102S-4 Power Field-Effect Transistor, 6.4A I(D), 55V, 0.028ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DSO-28 Infineon Technologies AG BUZ102S-4 vs BUZ102S-4

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