Part Details for BSS138W-H6327 by Infineon Technologies AG
Overview of BSS138W-H6327 by Infineon Technologies AG
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSS138W-H6327
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.28A I(D), 60V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 9253 |
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$0.0478 / $0.1472 | Buy Now |
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.28A I(D), 60V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 704 |
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$0.0700 / $0.3500 | Buy Now |
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.28A I(D), 60V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 14380 |
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$0.1170 / $0.7800 | Buy Now |
Part Details for BSS138W-H6327
BSS138W-H6327 CAD Models
BSS138W-H6327 Part Data Attributes
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BSS138W-H6327
Infineon Technologies AG
Buy Now
Datasheet
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BSS138W-H6327
Infineon Technologies AG
Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | GREEN, PLASTIC PACKAGE-3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.95 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.28 A | |
Drain-source On Resistance-Max | 3.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 4.2 pF | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 0.5 W | |
Power Dissipation-Max (Abs) | 0.5 W | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for BSS138W-H6327
This table gives cross-reference parts and alternative options found for BSS138W-H6327. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS138W-H6327, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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2N7002KWT/R13 | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 | PanJit Semiconductor | BSS138W-H6327 vs 2N7002KWT/R13 |
2N7002KW | Small Signal Field-Effect Transistor | Jiangsu Changjiang Electronics Technology Co Ltd | BSS138W-H6327 vs 2N7002KW |
2N7002KW_R2_10001 | Transistor, | PanJit Semiconductor | BSS138W-H6327 vs 2N7002KW_R2_10001 |
2N7002KTB | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 | PanJit Semiconductor | BSS138W-H6327 vs 2N7002KTB |
BSS138WH6327XTSA1 | Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | BSS138W-H6327 vs BSS138WH6327XTSA1 |
RE1L002SNTL | Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EMT3F, 3 PIN | ROHM Semiconductor | BSS138W-H6327 vs RE1L002SNTL |
934068055235 | Small Signal Field-Effect Transistor, 0.27A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | Nexperia | BSS138W-H6327 vs 934068055235 |
NX7002BKWX | NX7002BKW - 60 V, single N-channel Trench MOSFET@en-us SC-70 3-Pin | Nexperia | BSS138W-H6327 vs NX7002BKWX |
2N7002KW_R1_00001 | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | PanJit Semiconductor | BSS138W-H6327 vs 2N7002KW_R1_00001 |
2N7002KTB_R1_00001 | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | PanJit Semiconductor | BSS138W-H6327 vs 2N7002KTB_R1_00001 |
Resources and Additional Insights for BSS138W-H6327
Reference Designs related to BSS138W-H6327
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15W Qi transmitter for charging smartphones
The 15W wireless power transmitter evaluation module is a high-performance, easy-to-use development kit designed for applications up to 15W of power transfer. It supports an input voltage range of 9-12V and is compatible with QC 3.0 adapters.