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Transistors Small Signal Field-Effect Transistors BSS123-G

BSS123-G
Description: Small Signal Field-Effect Transistor

Overview of BSS123-G by onsemi

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for BSS123-G by onsemi

Part # Manufacturer Description Stock Price Buy
DISTI # 38AH6534
Newark N-Channel Logic Level Enhancement Mode Field Effect Transistor/Reel |Onsemi BSS123-G RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # BSS123-G
Avnet Americas N-Channel Logic Level Enhancement Mode Field Effect Transistor 100V 0.17A 6Ohm 100V 0 - Tape and Reel (Alt: BSS123-G) RoHS: Compliant Min Qty: 3661 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel 47884 Partner Stock
  • 3,661 $0.1011
  • 3,700 $0.0984
  • 7,400 $0.0956
  • 19,000 $0.0929
  • 37,000 $0.0902
  • 190,000 $0.0874
  • 370,000 $0.0847
$0.0847 / $0.1011 Buy Now
Rochester Electronics BSS123-G - N-Channel Logic Level Enhancement Mode Field Effect Transistor RoHS: Compliant Status: Obsolete Min Qty: 1 47884
  • 1 $0.0996
  • 25 $0.0976
  • 100 $0.0936
  • 500 $0.0896
  • 1,000 $0.0847
$0.0847 / $0.0996 Buy Now

CAD Models for BSS123-G by onsemi
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Part Data Attributes for BSS123-G by onsemi
Parametric Data

BSS123-G
onsemi
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
ONSEMI
Reach Compliance Code
compliant
ECCN Code
EAR99
Factory Lead Time
4 Weeks
Samacsys Manufacturer
onsemi
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
0.17 A
Drain-source On Resistance-Max
10 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
3.4 pF
JEDEC-95 Code
TO-236
JESD-30 Code
R-PDSO-G3
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
0.36 W
Surface Mount
YES
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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Alternate Parts for BSS123-G

This table gives cross-reference parts and alternative options found for BSS123-G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS123-G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
BSS123 Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Diodes Incorporated BSS123-G vs BSS123
BSS123 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB Texas Instruments BSS123-G vs BSS123
BSS123-7 Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3 Diodes Incorporated BSS123-G vs BSS123-7
BSS123 Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-23, 3 PIN Infineon Technologies AG BSS123-G vs BSS123
BSS123 Small Signal Field-Effect Transistor, Galaxy Microelectronics BSS123-G vs BSS123
BSS123L99Z TRANSISTOR 170 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal National Semiconductor Corporation BSS123-G vs BSS123L99Z
BSS123/L99Z TRANSISTOR 170 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal National Semiconductor Corporation BSS123-G vs BSS123/L99Z
BSS123-13 Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3 Diodes Incorporated BSS123-G vs BSS123-13
BSS123 Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AA Motorola Semiconductor Products BSS123-G vs BSS123
BSS123D87Z TRANSISTOR 170 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal National Semiconductor Corporation BSS123-G vs BSS123D87Z
Part Number Description Manufacturer Compare
BSS123LT3 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, CASE 318-08, 3 PIN onsemi BSS123-G vs BSS123LT3
BSS123L6433 Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG BSS123-G vs BSS123L6433
BSS123 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AA Motorola Mobility LLC BSS123-G vs BSS123
BSS123-3L Small Signal Field-Effect Transistor, Galaxy Microelectronics BSS123-G vs BSS123-3L
BSS123/S62Z TRANSISTOR 170 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal National Semiconductor Corporation BSS123-G vs BSS123/S62Z
BSS123LT1 Power MOSFET 170 mA, 100 V, N-Channel SOT-23, SOT-23 (TO-236) 3 LEAD, 3000-REEL onsemi BSS123-G vs BSS123LT1
BSS123G Small Signal Field-Effect Transistor, Galaxy Microelectronics BSS123-G vs BSS123G
BSS123 Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-23, 3 PIN Infineon Technologies AG BSS123-G vs BSS123
BSS123TC Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Zetex / Diodes Inc BSS123-G vs BSS123TC
BSS123/L99Z TRANSISTOR 170 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal National Semiconductor Corporation BSS123-G vs BSS123/L99Z

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