BSS123-G vs BSS123/S62Z feature comparison

BSS123-G onsemi

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BSS123/S62Z National Semiconductor Corporation

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Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer ONSEMI NATIONAL SEMICONDUCTOR CORP
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 0.17 A 0.17 A
Drain-source On Resistance-Max 10 Ω 10 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 3.4 pF 6 pF
JEDEC-95 Code TO-236
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 0.36 W 0.36 W
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Package Description SMALL OUTLINE, R-PDSO-G3
Power Dissipation Ambient-Max 0.36 W
Qualification Status Not Qualified

Compare BSS123-G with alternatives

Compare BSS123/S62Z with alternatives