Datasheets
BSM35GP120G by:

Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, MODULE-35

Part Details for BSM35GP120G by Infineon Technologies AG

Overview of BSM35GP120G by Infineon Technologies AG

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Part Details for BSM35GP120G

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BSM35GP120G Part Data Attributes

BSM35GP120G Infineon Technologies AG
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BSM35GP120G Infineon Technologies AG Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, MODULE-35
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description MODULE-35
Pin Count 35
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 45 A
Collector-Emitter Voltage-Max 1200 V
Configuration COMPLEX
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X35
Number of Elements 7
Number of Terminals 35
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 180 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 390 ns
Turn-on Time-Nom (ton) 105 ns
VCEsat-Max 2.85 V

Alternate Parts for BSM35GP120G

This table gives cross-reference parts and alternative options found for BSM35GP120G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSM35GP120G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSM35GP120 Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, MODULE-24 Infineon Technologies AG BSM35GP120G vs BSM35GP120
MUBW35-12A7 Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-24 Littelfuse Inc BSM35GP120G vs MUBW35-12A7

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