Datasheets
MUBW35-12A7 by:

Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-24

Part Details for MUBW35-12A7 by Littelfuse Inc

Overview of MUBW35-12A7 by Littelfuse Inc

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Applications Energy and Power Systems

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Price & Stock for MUBW35-12A7

Part # Distributor Description Stock Price Buy
DISTI # 03AH5622
Newark Igbt Module - Cbi E2-Pack-Pfp/Box |Littelfuse MUBW35-12A7 RoHS: Not Compliant Min Qty: 6 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # V36:1790_15877840
Arrow Electronics Trans IGBT Module N-CH 1200V 50A 225W 24-Pin RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 78 Weeks Date Code: 2322 Americas - 1
  • 1 $85.4500
  • 10 $80.2800
  • 25 $79.7700
  • 50 $79.2500
  • 100 $76.4600
$76.4600 / $85.4500 Buy Now
DISTI # 69209557
Verical Trans IGBT Module N-CH 1200V 50A 225W 24-Pin RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 2322 Americas - 1
  • 1 $85.4500
  • 10 $80.2800
  • 25 $79.7700
  • 50 $79.2500
  • 100 $76.4600
$76.4600 / $85.4500 Buy Now

Part Details for MUBW35-12A7

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MUBW35-12A7 Part Data Attributes

MUBW35-12A7 Littelfuse Inc
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MUBW35-12A7 Littelfuse Inc Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-24
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer LITTELFUSE INC
Package Description FLANGE MOUNT, R-XUFM-X24
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature LOW SWITCHING LOSS, LOW SATURATION VOLTAGE
Case Connection ISOLATED
Collector Current-Max (IC) 50 A
Collector-Emitter Voltage-Max 1200 V
Configuration COMPLEX
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X24
JESD-609 Code e3
Number of Elements 7
Number of Terminals 24
Operating Temperature-Max 125 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 225 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 570 ns
Turn-on Time-Nom (ton) 170 ns
VCEsat-Max 3.1 V

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