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Power Field-Effect Transistor, 7.2A I(D), 100V, 0.0252ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
60R2521
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Newark | Mosfet, N Channel, 100V, 40A, Pg-Tsdson, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:40A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon BSC252N10NSFGATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.5260 / $1.3000 | Buy Now |
DISTI #
BSC252N10NSFGATMA1CT-ND
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DigiKey | MOSFET N-CH 100V 7.2A/40A TDSON Min Qty: 1 Lead time: 20 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
9752 In Stock |
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$0.4750 / $1.2600 | Buy Now |
DISTI #
BSC252N10NSFGATMA1
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Avnet Americas | Trans MOSFET N-CH 100V 7.2A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC252N10NSFGATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
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$0.4425 / $0.5058 | Buy Now |
DISTI #
726-BSC252N10NSFGATM
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Mouser Electronics | MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2 RoHS: Compliant | 30000 |
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$0.4740 / $1.2500 | Buy Now |
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Future Electronics | N-Channel 100 V 2.25 mOhm OptiMOS™2 Power-Transistor - PG-TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 15000Reel |
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$0.3500 | Buy Now |
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Future Electronics | N-Channel 100 V 2.25 mOhm OptiMOS™2 Power-Transistor - PG-TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 5000Reel |
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$0.3500 | Buy Now |
DISTI #
BSC252N10NSFGATMA1
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Avnet Americas | Trans MOSFET N-CH 100V 7.2A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC252N10NSFGATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
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$0.4425 / $0.5058 | Buy Now |
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Ameya Holding Limited | Min Qty: 5000 | 4995 |
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$0.8820 | Buy Now |
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Ameya Holding Limited | N-Channel 100 V 2.25 mOhm OptiMOS™2 Power-Transistor - PG-TDSON-8 | 2622 |
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RFQ | |
DISTI #
SP000379608
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EBV Elektronik | Trans MOSFET N-CH 100V 7.2A 8-Pin TDSON T/R (Alt: SP000379608) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 19 Weeks, 0 Days | EBV - 100000 |
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Buy Now |
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BSC252N10NSFGATMA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
BSC252N10NSFGATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 7.2A I(D), 100V, 0.0252ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-F5 | |
Pin Count | 8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 18 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 68 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 7.2 A | |
Drain-source On Resistance-Max | 0.0252 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 160 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for BSC252N10NSFGATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC252N10NSFGATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
2SK3589-01 | Power Field-Effect Transistor, 6.9A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TFP, 4 PIN | Fuji Electric Co Ltd | BSC252N10NSFGATMA1 vs 2SK3589-01 |